loadpatents
name:-0.0067138671875
name:-0.018470048904419
name:-0.0016260147094727
Hiroki; Akira Patent Filings

Hiroki; Akira

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hiroki; Akira.The latest application filed is for "double-rod type shock absorber".

Company Profile
0.14.5
  • Hiroki; Akira - Adachi-ku JP
  • Hiroki; Akira - Tsukubamirai N/A JP
  • Hiroki; Akira - Tsukubamirai-shi JP
  • Hiroki; Akira - Izumi JP
  • Hiroki; Akira - Osaka JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Double-rod type shock absorber
Grant 9,366,306 - Miyasato , et al. June 14, 2
2016-06-14
Double-rod Type Shock Absorber
App 20150198212 - Miyasato; Eiko ;   et al.
2015-07-16
Hydraulic shock absorber
Grant 8,857,583 - Miyasato , et al. October 14, 2
2014-10-14
Hydraulic shock absorber
Grant 8,757,338 - Miyasato , et al. June 24, 2
2014-06-24
Hydraulic Shock Absorber
App 20130015027 - Miyasato; Eiko ;   et al.
2013-01-17
Hydraulic Shock Absorber
App 20120247891 - MIYASATO; Eiko ;   et al.
2012-10-04
Fluid pressure cylinder apparatus having throttle valve
Grant 7,526,993 - Hiroki , et al. May 5, 2
2009-05-05
Fluid pressure cylinder apparatus having throttle valve
App 20070017363 - Hiroki; Akira ;   et al.
2007-01-25
Complementary semiconductor device and method for producing the same
Grant 6,031,268 - Hiroki , et al. February 29, 2
2000-02-29
MOS type semiconductor device having an impurity diffusion layer with a nonuniform impurity concentration profile in a channel region
Grant 6,031,272 - Hiroki , et al. February 29, 2
2000-02-29
Method for forming complementary MOS device having asymmetric region in channel region
Grant 5,830,788 - Hiroki , et al. November 3, 1
1998-11-03
MIS transistor with gate sidewall insulating layer
Grant 5,808,347 - Kurimoto , et al. September 15, 1
1998-09-15
MOS transistor and its fabricating method
Grant 5,518,944 - Hiroki , et al. May 21, 1
1996-05-21
MOS type semiconductor device having a low concentration impurity diffusion region
Grant 5,512,771 - Hiroki , et al. April 30, 1
1996-04-30
LDD FET with polysilicon sidewalls
Grant 5,386,133 - Hiroki , et al. January 31, 1
1995-01-31
Method of proudcing a MIS transistor
Grant 5,221,632 - Kurimoto , et al. June 22, 1
1993-06-22

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