loadpatents
Patent applications and USPTO patent grants for Hirabayashi; Yasuhiro.The latest application filed is for "semiconductor device".
Patent | Date |
---|---|
Semiconductor device Grant 11,133,406 - Iwashima , et al. September 28, 2 | 2021-09-28 |
Semiconductor device including diode structure Grant 10,658,498 - Hirabayashi | 2020-05-19 |
Semiconductor Device App 20190273154 - IWASHIMA; Yayoi ;   et al. | 2019-09-05 |
Semiconductor Device App 20190115460 - HIRABAYASHI; Yasuhiro | 2019-04-18 |
Semiconductor device Grant 9,899,374 - Hirabayashi February 20, 2 | 2018-02-20 |
Semiconductor device Grant 9,853,024 - Senoo , et al. December 26, 2 | 2017-12-26 |
Semiconductor Device App 20170250179 - SENOO; Masaru ;   et al. | 2017-08-31 |
Semiconductor device Grant 9,666,579 - Senoo , et al. May 30, 2 | 2017-05-30 |
Semiconductor Device App 20170148785 - HIRABAYASHI; Yasuhiro | 2017-05-25 |
Semiconductor device and method of manufacturing the semiconductor device Grant 9,620,499 - Hirabayashi , et al. April 11, 2 | 2017-04-11 |
Semiconductor device Grant 9,595,603 - Hirabayashi , et al. March 14, 2 | 2017-03-14 |
Semiconductor Device And Method Of Manufacturing The Semiconductor Device App 20170069625 - HIRABAYASHI; Yasuhiro ;   et al. | 2017-03-09 |
Igbt App 20170040442 - HIRABAYASHI; Yasuhiro ;   et al. | 2017-02-09 |
Semiconductor Device App 20170005186 - Hirabayashi; Yasuhiro ;   et al. | 2017-01-05 |
Reverse conducting insulated gate bipolar transistor Grant 9,536,961 - Hirabayashi , et al. January 3, 2 | 2017-01-03 |
Reverse conducting insulated gate bipolar transistor Grant 9,520,487 - Hirabayashi , et al. December 13, 2 | 2016-12-13 |
Semiconductor Device App 20160351562 - SENOO; Masaru ;   et al. | 2016-12-01 |
Vertical-type Semiconductor Device App 20160276469 - MACHIDA; Satoru ;   et al. | 2016-09-22 |
Semiconductor device Grant 9,437,700 - Machida , et al. September 6, 2 | 2016-09-06 |
Semiconductor device Grant 9,437,720 - Hirabayashi , et al. September 6, 2 | 2016-09-06 |
Semiconductor device with termination region having floating electrodes in an insulating layer Grant 9,385,188 - Hirabayashi , et al. July 5, 2 | 2016-07-05 |
Reverse Conducting Insulated Gate Bipolar Transistor App 20160172453 - HIRABAYASHI; Yasuhiro ;   et al. | 2016-06-16 |
Reverse Conducting Insulated Gate Bipolar Transistor App 20160172471 - HIRABAYASHI; Yasuhiro ;   et al. | 2016-06-16 |
Semiconductor Device App 20160141401 - Hirabayashi; Yasuhiro ;   et al. | 2016-05-19 |
Semiconductor Device App 20160111529 - Hirabayashi; Yasuhiro ;   et al. | 2016-04-21 |
Semiconductor Device And Manufacturing Method Thereof App 20160005843 - HIRABAYASHI; Yasuhiro ;   et al. | 2016-01-07 |
Semiconductor Device App 20150279953 - MACHIDA; Satoru ;   et al. | 2015-10-01 |
Semiconductor Device App 20150206960 - HIRABAYASHI; Yasuhiro ;   et al. | 2015-07-23 |
Semiconductor device Grant 9,082,842 - Hirabayashi , et al. July 14, 2 | 2015-07-14 |
Semiconductor Device And Method For Manufacturing The Same App 20140374871 - Hirabayashi; Yasuhiro ;   et al. | 2014-12-25 |
Semiconductor Device App 20140291757 - Hirabayashi; Yasuhiro ;   et al. | 2014-10-02 |
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