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Patent applications and USPTO patent grants for Hing; Fung Ka.The latest application filed is for "gate structure having lightly doped region".
Patent | Date |
---|---|
Gate structure having lightly doped region Grant 8,952,459 - Hing , et al. February 10, 2 | 2015-02-10 |
Gate Structure Having Lightly Doped Region App 20130334617 - HING; Fung Ka ;   et al. | 2013-12-19 |
Transistors having a composite strain structure, integrated circuits, and fabrication methods thereof Grant 8,558,289 - Cheng , et al. October 15, 2 | 2013-10-15 |
Method for fabricating a gate structure Grant 8,535,998 - Hing , et al. September 17, 2 | 2013-09-17 |
Integrated Circuits And Manufacturing Methods Thereof App 20130130456 - WU; Chung-Cheng ;   et al. | 2013-05-23 |
Multi-strained source/drain structures Grant 8,405,160 - Cheng , et al. March 26, 2 | 2013-03-26 |
Multi-strained Source/drain Structures App 20110291201 - Cheng; Chun-Fai ;   et al. | 2011-12-01 |
Method For Fabricating A Gate Structure App 20110223752 - HING; Fung Ka ;   et al. | 2011-09-15 |
Transistors Having A Composite Strain Structure, Integrated Circuits, And Fabrication Methods Thereof App 20110024801 - CHENG; Chun-Fai ;   et al. | 2011-02-03 |
Method for forming a MOS device with reduced transient enhanced diffusion Grant 7,759,210 - Huang , et al. July 20, 2 | 2010-07-20 |
Method for forming a most device with reduced transient enhanced diffusion App 20080153238 - Huang; Huan-Tsung ;   et al. | 2008-06-26 |
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