loadpatents
Patent applications and USPTO patent grants for Himi; Hiroaki.The latest application filed is for "physical quantity sensor and method for manufacturing the same".
Patent | Date |
---|---|
Semiconductor device with trench structure Grant 7,838,909 - Himi , et al. November 23, 2 | 2010-11-23 |
Method for manufacturing semiconductor substrate Grant 7,754,580 - Himi , et al. July 13, 2 | 2010-07-13 |
Physical quantity sensor and method for manufacturing the same App 20080099862 - Fujii; Tetsuo ;   et al. | 2008-05-01 |
Method for manufacturing semiconductor substrate App 20070194413 - Himi; Hiroaki ;   et al. | 2007-08-23 |
Semiconductor device Grant 7,239,181 - Himi , et al. July 3, 2 | 2007-07-03 |
Method for manufacturing semiconductor substrate Grant 7,220,654 - Himi , et al. May 22, 2 | 2007-05-22 |
Semiconductor device with trench structure App 20070018275 - Himi; Hiroaki ;   et al. | 2007-01-25 |
Semiconductor device with trench structure and method for manufacturing the same Grant 7,132,347 - Himi , et al. November 7, 2 | 2006-11-07 |
Semiconductor device for high voltage IC App 20060231868 - Yamada; Akira ;   et al. | 2006-10-19 |
Semiconductor device App 20060087343 - Himi; Hiroaki ;   et al. | 2006-04-27 |
Semiconductor device having bipolar transistors Grant 6,768,183 - Takahashi , et al. July 27, 2 | 2004-07-27 |
Method for manufacturing semiconductor substrate App 20040108566 - Himi, Hiroaki ;   et al. | 2004-06-10 |
Semiconductor device and method for manufacturing the same App 20040046226 - Himi, Hiroaki ;   et al. | 2004-03-11 |
Method for manufacturing semiconductor substrate Grant 6,676,748 - Himi , et al. January 13, 2 | 2004-01-13 |
Method for manufacturing a semiconductor device having lateral MOSFET (LDMOS) App 20020190309 - Takahashi, Shigeki ;   et al. | 2002-12-19 |
Semiconductor device having bipolar transistors App 20020153592 - Takahashi, Shigeki ;   et al. | 2002-10-24 |
Semiconductor device having lateral MOSFET (LDMOS) Grant 6,465,839 - Takahashi , et al. October 15, 2 | 2002-10-15 |
Semiconductor device and manufacturing method of the same App 20020005550 - Takahashi, Shigeki ;   et al. | 2002-01-17 |
Electroluminescent display device Grant 6,064,158 - Kishita , et al. May 16, 2 | 2000-05-16 |
Semiconductor device having a high breakdown voltage Grant 5,874,768 - Yamaguchi , et al. February 23, 1 | 1999-02-23 |
Polishing method for SOI Grant 5,851,846 - Matsui , et al. December 22, 1 | 1998-12-22 |
Electroluminescent display driver device Grant 5,847,516 - Kishita , et al. December 8, 1 | 1998-12-08 |
Semiconductor device having a silicon-on-insulator structure Grant 5,777,365 - Yamaguchi , et al. July 7, 1 | 1998-07-07 |
SOI MOSFET with floating gate Grant 5,488,243 - Tsuruta , et al. January 30, 1 | 1996-01-30 |
Method of manufacturing semiconductor substrate Grant 5,451,547 - Himi , et al. September 19, 1 | 1995-09-19 |
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