Higashiwaki; Masataka

Patent Applications and Registrations

Patent applications and USPTO patent grants for Higashiwaki; Masataka.The latest application filed is for "semiconductor substrate, semiconductor element and method for producing semiconductor substrate".

Company Profile

4.14.22

Higashiwaki; Masataka - Tokyo JP
Higashiwaki; Masataka - Koganei JP
HIGASHIWAKI; Masataka - Koganei-shi Tokyo

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor substrate, semiconductor element and method for producing semiconductor substrate Grant 11,264,241 - Kuramata , et al. March 1, 2	2022-03-01
Trench MOS Schottky diode Grant 11,081,598 - Sasaki , et al. August 3, 2	2021-08-03
Semiconductor element and crystalline laminate structure Grant 10,861,945 - Sasaki , et al. December 8, 2	2020-12-08
Trench MOS-type Schottky diode Grant 10,825,935 - Sasaki , et al. November 3, 2	2020-11-03
Semiconductor Substrate, Semiconductor Element And Method For Producing Semiconductor Substrate App 20200168460 - KURAMATA; Akito ; et al.	2020-05-28
Ga2o3-based Semiconductor Device App 20200144377 - HIGASHIWAKI; Masataka ; et al.	2020-05-07
Trench Mos Schottky Diode App 20200066921 - SASAKI; Kohei ; et al.	2020-02-27
Trench Mos-type Schottky Diode App 20190148563 - SASAKI; Kohei ; et al.	2019-05-16
Ga.sub.2O.sub.3-based semiconductor element Grant 10,249,767 - Sasaki , et al.	2019-04-02
Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure Grant 10,230,007 - Sasaki , et al.	2019-03-12
High voltage withstand Ga2O3-based single crystal schottky barrier diode Grant 10,199,512 - Sasaki , et al. Fe	2019-02-05
Ga2O3 SEMICONDUCTOR ELEMENT App 20180350967 - SASAKI; Kohei ; et al.	2018-12-06
High Withstand Voltage Schottky Barrier Diode App 20180254355 - SASAKI; Kohei ; et al.	2018-09-06
Semiconductor Element And Production Method For Same App 20170288061 - SASAKI; Kohei ; et al.	2017-10-05
Semiconductor Element And Crystalline Laminate Structure App 20170278933 - SASAKI; Kohei ; et al.	2017-09-28
Semiconductor Element, Method For Manufacturing Same, Semiconductor Substrate, And Crystal Laminate Structure App 20170213918 - SASAKI; Kohei ; et al.	2017-07-27
Method for controlling donor concentration in Ga.sub.2O.sub.3-based and method for forming ohmic contact Grant 9,611,567 - Sasaki , et al. April 4, 2	2017-04-04
Ga2O3 SEMICONDUCTOR ELEMENT App 20160365418 - Sasaki; Kohei ; et al.	2016-12-15
Ga2o3-based Semiconductor Element App 20160300953 - Sasaki; Kohei ; et al.	2016-10-13
Ga.sub.2O.sub.3 semiconductor element Grant 9,461,124 - Sasaki , et al. October 4, 2	2016-10-04
Ga2O3 semiconductor element Grant 9,437,689 - Sasaki , et al. September 6, 2	2016-09-06
Ga2O3 SEMICONDUCTOR ELEMENT App 20160141372 - SASAKI; Kohei ; et al.	2016-05-19
METHOD OF FORMING HIGH-RESISTIVITY REGION IN Ga2O3-BASED SINGLE CRYSTAL, AND CRYSTAL LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENT App 20160042949 - SASAKI; Kohei ; et al.	2016-02-11
Method of forming Ga2O3-based crystal film and crystal multilayer structure Grant 9,245,749 - Sasaki , et al. January 26, 2	2016-01-26
METHOD FOR CONTROLLING DONOR CONCENTRATION IN Ga2O3 SINGLE CRYSTAL BODY, AND METHOD FOR FORMING OHMIC CONTACT App 20160002823 - SASAKI; Kohei ; et al.	2016-01-07
Method of Forming Ga2O3-Based Crystal Film and Crystal Multilayer Structure App 20150179445 - SASAKI; Kohei ; et al.	2015-06-25
Ga2O3 SEMICONDUCTOR ELEMENT App 20140217469 - Sasaki; Kohei ; et al.	2014-08-07
Ga2O3 SEMICONDUCTOR ELEMENT App 20140217471 - Sasaki; Kohei ; et al.	2014-08-07
Ga2O3 SEMICONDUCTOR ELEMENT App 20140217470 - Sasaki; Kohei ; et al.	2014-08-07
Ga2O3 SEMICONDUCTOR ELEMENT App 20140217405 - Sasaki; Kohei ; et al.	2014-08-07
Gan-based field effect transistor and production method therefor Grant 7,547,911 - Higashiwaki June 16, 2	2009-06-16
Gan-Based Field Effect Transistor and Production Method Therefor App 20070295990 - Higashiwaki; Masataka	2007-12-27

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