Higashihara; Shuhei

Patent Applications and Registrations

Patent applications and USPTO patent grants for Higashihara; Shuhei.The latest application filed is for "method of producing substrates including gallium nitride".

Company Profile

4.12.16

Higashihara; Shuhei - Nagoya-city JP
Higashihara; Shuhei - Nagoya JP
HIGASHIHARA; Shuhei - Nagoya-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of producing substrates including gallium nitride App 20200411718 - Higashihara; Shuhei ; et al.	2020-12-31
Phosphor element and illumination device Grant 10,859,747 - Kondo , et al. December 8, 2	2020-12-08
Optical Component App 20190309936 - KONDO; Jungo ; et al.	2019-10-10
Phosphor Element And Illumination Device App 20190310408 - KONDO; Jungo ; et al.	2019-10-10
Method and device for producing a group 13 element nitride crystal using a shielding object Grant 10,190,233 - Noguchi , et al. Ja	2019-01-29
Method for producing nitride of group-13 element, and melt composition Grant 10,156,022 - Hirao , et al. Dec	2018-12-18
Method for producing nitride crystal Grant 10,041,186 - Imai , et al. August 7, 2	2018-08-07
Growing Method and Device for Group 13 Element Nitride Crystal App 20170283983 - Noguchi; Suguru ; et al.	2017-10-05
Method for Producing Nitride Crystal App 20160355945 - Imai; Katsuhiro ; et al.	2016-12-08
Substrates Including Gallium Nitride Layers and a Method of Producing the Same App 20160300980 - Higashihara; Shuhei ; et al.	2016-10-13
Method for Producing Nitride of Group-13 Element, and Melt Composition App 20160168749 - Hirao; Takayuki ; et al.	2016-06-16
Substrates Including Gallium Nitride Layers and a Method of Producing the Same App 20150303066 - Higashihara; Shuhei ; et al.	2015-10-22
Method for producing gallium nitride layer and seed crystal substrate used in same Grant 8,795,431 - Imai , et al. August 5, 2	2014-08-05
Process for Producing Group 13 Metal Nitride, and Seed Crystal Substrate for Use in Same App 20140026809 - Iwai; Makoto ; et al.	2014-01-30
Method for Producing Gallium Nitride Layer and Seed Crystal Substrate Used in Same App 20140014028 - Imai; Katsuhiro ; et al.	2014-01-16
Method for growing single crystal of group III metal nitride and reaction vessel for use in same Grant 8,568,532 - Iwai , et al. October 29, 2	2013-10-29
Method for producing group III nitride semiconductor Grant 8,501,141 - Sato , et al. August 6, 2	2013-08-06
Method For Growing Single Crystal Of Group Iii Metal Nitride And Reaction Vessel For Use In Same App 20120137961 - Iwai; Makoto ; et al.	2012-06-07
Reaction Vessel For Growing Single Crystal And Method For Growing Single Crystal App 20110259261 - IWAI; Makoto ; et al.	2011-10-27
Single crystal growing method Grant 7,842,133 - Iwai , et al. November 30, 2	2010-11-30
Process and apparatus for producing nitride single crystal Grant 7,833,347 - Iwai , et al. November 16, 2	2010-11-16
Method for producing group III nitride semiconductor App 20100247418 - Sato; Takayuki ; et al.	2010-09-30
Crystal growing apparatus Grant 7,708,833 - Yamazaki , et al. May 4, 2	2010-05-04
Process And Apparatus For Producing Nitride Single Crystal App 20090013924 - Iwai; Makoto ; et al.	2009-01-15
Single Crystal Growing Method App 20090000538 - Iwai; Makoto ; et al.	2009-01-01
Crystal growing apparatus App 20080223288 - Yamazaki; Shiro ; et al.	2008-09-18

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