Hieber; Konrad

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hieber; Konrad.The latest application filed is for "method for metallizing submicron contact holes in semiconductor bodies".

Company Profile

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Hieber; Konrad - Neukeferloh DE
Hieber; Konrad - Bernau DE
Hieber; Konrad - Munich DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for metallizing submicron contact holes in semiconductor bodies Grant 6,057,229 - Hieber , et al. May 2, 2	2000-05-02
Method and apparatus for producing conductive layers or structures for VLSI circuits Grant 5,478,780 - Koerner , et al. December 26, 1	1995-12-26
Method for locally and globally planarizing chemical vapor deposition of SiO.sub.2 layers onto structured silicon substrates Grant 5,399,389 - Hieber , et al. March 21, 1	1995-03-21
Method for monitoring etching processes Grant 4,810,335 - Hieber March 7, 1	1989-03-07
Method for controlling and supervising etching processes Grant 4,767,496 - Hieber August 30, 1	1988-08-30
Method for the manufacture of cross-couplings between n-channel and p-channel CMOS field effect transistors of static write-read memories Grant 4,740,479 - Neppl , et al. * April 26, 1	1988-04-26
Integrated semiconductor circuit including a tantalum silicide diffusion barrier Grant 4,680,612 - Hieber , et al. July 14, 1	1987-07-14
Integrated MOS transistors having a gate metallization composed of tantalum or niobium or their silicides Grant 4,673,968 - Hieber , et al. June 16, 1	1987-06-16
Method for the manufacture of gate electrodes formed of double layers of metal silicides having a high melting point and doped polycrystalline silicon Grant 4,640,844 - Neppl , et al. * February 3, 1	1987-02-03
Method for the manufacture of metal silicide layers by means of reduced pressure gas phase deposition Grant 4,608,271 - Hieber , et al. August 26, 1	1986-08-26
Method for monitoring and regulating the composition and the layer thickness of metallically conductive alloy layers during their manufacture Grant 4,592,921 - Hieber , et al. June 3, 1	1986-06-03
Method of measuring electric resistance of thin metallic layers manufactured under the influence of a plasma Grant 4,562,089 - Hieber , et al. December 31, 1	1985-12-31
System for measuring electrical resistance and temperature during manufacture of thin, conductive films deposited on substrates by means of evaporation or sputter deposition Grant 4,543,576 - Hieber , et al. September 24, 1	1985-09-24
Method for the manufacture of integrated MOS-field effect transistor circuits silicon gate technology having diffusion zones coated with silicide as low-impedance printed conductors Grant 4,510,670 - Schwabe , et al. April 16, 1	1985-04-16
Method for selective deposition of layer structures consisting of silicides of HMP metals on silicon substrates and products so-formed Grant 4,501,769 - Hieber , et al. February 26, 1	1985-02-26
Thin film electrical resistors and process of producing the same Grant 4,414,274 - Hieber November 8, 1	1983-11-08
Method of producing low-resistant, monocrystalline metallic layers by implanting ions into a polycrystalline metal layer and heating to produce a monocrystalline layer Grant 4,351,695 - Hieber , et al. September 28, 1	1982-09-28
Method for reproducible manufacture of metallic layers Grant 4,331,702 - Hieber , et al. May 25, 1	1982-05-25
CVD Coating device for small parts Grant 4,258,658 - Politycki , et al. March 31, 1	1981-03-31
Coating device for small electrically conductive components Grant 4,048,954 - Politycki , et al. September 20, 1	1977-09-20
Electrical resistor and method of producing same Grant 3,958,071 - Hieber , et al. May 18, 1	1976-05-18

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