Heying; Benjamin

Patent Applications and Registrations

Patent applications and USPTO patent grants for Heying; Benjamin.The latest application filed is for "semiconductor devices using insulator-metal phase change materials and method for fabrication".

Company Profile

1.7.6

Heying; Benjamin - Fullerton CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor devices using insulator-metal phase change materials and method for fabrication Grant 11,018,296 - Gambin , et al. May 25, 2	2021-05-25
Semiconductor devices using insulator-metal phase change materials and method for fabrication Grant 10,811,601 - Gambin , et al. October 20, 2	2020-10-20
Semiconductor Devices Using Insulator-Metal Phase Change Materials and Method for Fabrication App 20200235293 - Gambin; Vincent ; et al.	2020-07-23
AIN buffer N-polar GaN HEMT profile Grant 8,710,511 - Gambin , et al. April 29, 2	2014-04-29
Composite passivation process for nitride FET Grant 8,431,962 - Heying , et al. April 30, 2	2013-04-30
AlN BUFFER N-POLAR GaN HEMT PROFILE App 20130026489 - Gambin; Vincent ; et al.	2013-01-31
Method for fabricating a nitride FET including passivation layers Grant 7,632,726 - Heying , et al. December 15, 2	2009-12-15
Composite Passivation Process for Nitride FET App 20090146224 - Heying; Benjamin ; et al.	2009-06-11
Method for Fabricating a Nitride FET Including Passivation Layers App 20090148985 - Heying; Benjamin ; et al.	2009-06-11
Protective layer in device fabrication App 20080199993 - Heying; Benjamin ; et al.	2008-08-21

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