Heuken; Michael

Patent Applications and Registrations

Patent applications and USPTO patent grants for Heuken; Michael.The latest application filed is for "non-polar semiconductor light emission devices".

Company Profile

0.7.8

Heuken; Michael - Aachen DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Non-polar semiconductor light emission devices Grant 8,624,292 - Pan , et al. January 7, 2	2014-01-07
Non-polar Semiconductor Light Emission Devices App 20120205617 - Pan; Shaoher X. ; et al.	2012-08-16
Semi-polar semiconductor light emission devices Grant 8,217,418 - Pan , et al. July 10, 2	2012-07-10
Method of growing nitrogenous semiconductor crystal materials Grant 7,473,316 - Schottker , et al. January 6, 2	2009-01-06
Method and system for semiconductor crystal production with temperature management Grant 7,135,073 - Heuken , et al. November 14, 2	2006-11-14
Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates Grant 7,128,785 - Kaeppeler , et al. October 31, 2	2006-10-31
Method and device for depositing layers Grant 6,964,876 - Heuken November 15, 2	2005-11-15
Process for coating a substrate, and apparatus for carrying out the process App 20050109281 - Jurgensen, Holger ; et al.	2005-05-26
Method and device for monitoring a CVD-process App 20040261704 - Heuken, Michael ; et al.	2004-12-30
Method and device for depositing layers App 20040152219 - Heuken, Michael	2004-08-05
Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates App 20040129215 - Kaeppeler, Johannes ; et al.	2004-07-08
Method and device for producing group III-N, group III-V-N and metal-nitrogen component structures on Si substrates App 20030070610 - Dadgar, Armin ; et al.	2003-04-17
Method and system for semiconductor crystal production with temperature management App 20020001953 - Heuken, Michael ; et al.	2002-01-03
Method for producing a wafer support, used, in particular, in a high-temperature CVD reactor or in a high-temperature CVD process which involves the use of aggressive gases App 20010014397 - Schmitz, Dietmar ; et al.	2001-08-16

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