Herner; Brad

Patent Applications and Registrations

Patent applications and USPTO patent grants for Herner; Brad.The latest application filed is for "memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same".

Company Profile

0.14.16

Herner; Brad - San Jose CA US
Herner; Brad - Palo Alto CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same Grant 8,913,417 - Schricker , et al. December 16, 2	2014-12-16
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Grant 8,816,315 - Schricker , et al. August 26, 2	2014-08-26
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same Grant 8,558,220 - Schricker , et al. October 15, 2	2013-10-15
Memory Cell That Employs A Selectively Grown Reversible Resistance-switching Element And Methods Of Forming The Same App 20130146832 - Schricker; April D. ; et al.	2013-06-13
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Grant 8,373,150 - Schricker , et al. February 12, 2	2013-02-12
Memory Cell That Employs A Selectively Deposited Reversible Resistance-switching Element And Methods Of Forming The Same App 20120286233 - Schricker; April ; et al.	2012-11-15
Dense Arrays And Charge Storage Devices App 20120223380 - Lee; Thomas H. ; et al.	2012-09-06
Memory Cell That Employs A Selectively Grown Reversible Resistance-switching Element And Methods Of Forming The Same App 20120217462 - Schricker; April ; et al.	2012-08-30
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same Grant 8,236,623 - Schricker , et al. August 7, 2	2012-08-07
Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same Grant 8,233,308 - Schricker , et al. July 31, 2	2012-07-31
Dense Arrays And Charge Storage Devices App 20110156044 - Lee; Thomas H. ; et al.	2011-06-30
Memory Cell That Employs A Selectively Grown Reversible Resistance-switching Element And Methods Of Forming The Same App 20110147693 - SCHRICKER; APRIL ; et al.	2011-06-23
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Grant 7,902,537 - Schricker , et al. March 8, 2	2011-03-08
Memory Cell That Employs A Selectively Grown Reversible Resistance-switching Element And Methods Of Forming The Same App 20110042639 - Schricker; April ; et al.	2011-02-24
Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same Grant 7,846,785 - Schricker , et al. December 7, 2	2010-12-07
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Grant 7,824,956 - Schricker , et al. November 2, 2	2010-11-02
Memory Cell That Employs A Selectively Fabricated Carbon Nano-tube Reversible Resistance-switching Element And Methods Of Forming The Same App 20090168491 - Schricker; April ; et al.	2009-07-02
Memory Cell With Planarized Carbon Nanotube Layer And Methods Of Forming The Same App 20090166610 - Schricker; April ; et al.	2009-07-02
Memory Cell That Employs A Selectively Fabricated Carbon Nano-tube Reversible Resistance-switching Element Formed Over A Bottom Conductor And Methods Of Forming The Same App 20090166609 - Schricker; April ; et al.	2009-07-02
Memory Cell That Employs A Selectively Grown Reversible Resistance-switching Element And Methods Of Forming The Same App 20090001342 - SCHRICKER; APRIL ; et al.	2009-01-01
Memory Cell That Employs A Selectively Deposited Reversible Resistance-switching Element And Methods Of Forming The Same App 20090001345 - Schricker; April ; et al.	2009-01-01
Memory Cell That Employs A Selectively Deposited Reversible Resistance-switching Element And Methods Of Forming The Same App 20090001343 - Schricker; April ; et al.	2009-01-01
Memory Cell That Employs A Selectively Grown Reversible Resistance-switching Element And Methods Of Forming The Same App 20090001344 - Schricker; April ; et al.	2009-01-01
Dense arrays and charge storage devices Grant 7,129,538 - Lee , et al. October 31, 2	2006-10-31
Monolithic three dimensional array of charge storage devices containing a planarized surface Grant 6,881,994 - Lee , et al. April 19, 2	2005-04-19
Dense arrays and charge storage devices App 20040206996 - Lee, Thomas H. ; et al.	2004-10-21
Dense arrays and charge storage devices, and methods for making same App 20020028541 - Lee, Thomas H. ; et al.	2002-03-07

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