| Patent | Date |
|---|
Lateral semiconductor component with a drift zone having at least one field electrode
Grant 7,777,278 - Hirler , et al. August 17, 2 | 2010-08-17 |
Lateral Semiconductor Component With A Drift Zone Having At Least One Field Electrode
App 20080179672 - Hirler; Franz ; et al. | 2008-07-31 |
Trench transistor
Grant 7,274,077 - Henninger , et al. September 25, 2 | 2007-09-25 |
Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone
Grant 7,173,306 - Hirler , et al. February 6, 2 | 2007-02-06 |
Power transistor
Grant 7,091,573 - Hirler , et al. August 15, 2 | 2006-08-15 |
Method for fabricating gate electrodes in a field plate trench transistor, and field plate trench transistor
Grant 7,060,562 - Henninger , et al. June 13, 2 | 2006-06-13 |
Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration
Grant 7,005,351 - Henninger , et al. February 28, 2 | 2006-02-28 |
Lateral semiconductor component with a drift zone having at least one field electrode
App 20060006386 - Hirler; Franz ; et al. | 2006-01-12 |
Method for fabricating gate electrodes in a field plate trench transistor, and field plate trench transistor
App 20050215010 - Henninger, Ralf ; et al. | 2005-09-29 |
Trench transistor
App 20050194629 - Henninger, Ralf ; et al. | 2005-09-08 |
Field-effect-controllable semiconductor component and method for fabricating the component
Grant 6,927,101 - Henninger , et al. August 9, 2 | 2005-08-09 |
Trench transistors and methods for fabricating trench transistors
Grant 6,903,416 - Henninger , et al. June 7, 2 | 2005-06-07 |
Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell
Grant 6,891,223 - Krumrey , et al. May 10, 2 | 2005-05-10 |
Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone
App 20050082591 - Hirler, Franz ; et al. | 2005-04-21 |
Trench power semiconductor
Grant 6,833,584 - Henninger , et al. December 21, 2 | 2004-12-21 |
Semiconductor component with an increased breakdown voltage in the edge area
Grant 6,806,533 - Henninger , et al. October 19, 2 | 2004-10-19 |
Trench transistors and methods for fabricating trench transistors
App 20040104428 - Henninger, Ralf ; et al. | 2004-06-03 |
Power transistor
App 20040089910 - Hirler, Franz ; et al. | 2004-05-13 |
Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration
App 20040031987 - Henninger, Ralf ; et al. | 2004-02-19 |
Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance
Grant 6,690,062 - Henninger , et al. February 10, 2 | 2004-02-10 |
Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell
App 20030222297 - Krumrey, Joachim ; et al. | 2003-12-04 |
Semiconductor component with an increased breakdown voltage in the edge area
App 20030209757 - Henninger, Ralf ; et al. | 2003-11-13 |
Field-effect-controllable semiconductor component and method for fabricating the component
App 20030186507 - Henninger, Ralf ; et al. | 2003-10-02 |
Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance
App 20030178676 - Henninger, Ralf ; et al. | 2003-09-25 |
Trench power semiconductor component
App 20020185680 - Henninger, Ralf ; et al. | 2002-12-12 |
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