loadpatents
Patent applications and USPTO patent grants for Henderson; Timothy S..The latest application filed is for "bipolar transistor".
Patent | Date |
---|---|
Bipolar transistor Grant 11,282,923 - Zampardi , et al. March 22, 2 | 2022-03-22 |
Bipolar Transistor App 20210175328 - Zampardi; Peter J. ;   et al. | 2021-06-10 |
Dual-series varactor EPI Grant 10,833,071 - Wright , et al. November 10, 2 | 2020-11-10 |
Dual stack varactor Grant 10,535,784 - Wright , et al. Ja | 2020-01-14 |
Dual-series Varactor Epi App 20180374846 - Wright; Peter V. ;   et al. | 2018-12-27 |
Dual-series varactor EPI Grant 10,109,623 - Wright , et al. October 23, 2 | 2018-10-23 |
Dual Stack Varactor App 20180182903 - Wright; Peter V. ;   et al. | 2018-06-28 |
Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor Grant 9,608,084 - Henderson , et al. March 28, 2 | 2017-03-28 |
Dual-series Varactor Epi App 20160247800 - Wright; Peter V. ;   et al. | 2016-08-25 |
Emitter Contact Epitaxial Structure And Ohmic Contact Formation For Heterojunction Bipolar Transistor App 20160049493 - Henderson; Timothy S. ;   et al. | 2016-02-18 |
Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor Grant 9,231,088 - Henderson , et al. January 5, 2 | 2016-01-05 |
Dual Stack Varactor App 20150325573 - Wright; Peter V. ;   et al. | 2015-11-12 |
Electrostatic Discharge Protection Device App 20150221755 - Henderson; Timothy S. ;   et al. | 2015-08-06 |
Electrostatic discharge protection device Grant 9,099,518 - Henderson , et al. August 4, 2 | 2015-08-04 |
Emitter Contact Epitaxial Structure And Ohmic Contact Formation For Heterojunction Bipolar Transistor App 20150200284 - Henderson; Timothy S. ;   et al. | 2015-07-16 |
Bipolar transistor Grant 5,552,617 - Hill , et al. Sep | 1996-09-03 |
Method for fabricating GaInP/GaAs structures Grant 5,330,932 - Liu , et al. July 19, 1 | 1994-07-19 |
Semiconductor device with strained InGaAs layer Grant 4,827,320 - Morkoc , et al. May 2, 1 | 1989-05-02 |
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