| Patent | Date |
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Control Device For A Motor Vehicle
App 20220201868 - Bock; Johannes ; et al. | 2022-06-23 |
Control Unit For A Motor Vehicle And Method For Producing And Measuring The Tightness Of A Control Unit
App 20220201847 - Walda; Christian ; et al. | 2022-06-23 |
Method for magnetising at least two magnets having different magnetic coercivity
Grant 11,177,063 - Heinrich , et al. November 16, 2 | 2021-11-16 |
Method For Magnetising At Least Two Magnets Having Different Magnetic Coercivity
App 20200211747 - Heinrich; Jens ; et al. | 2020-07-02 |
Method for monitoring an electromechanical component of an automation system
Grant 10,324,431 - Hoffmann , et al. | 2019-06-18 |
Method For Monitoring An Electromechanical Component Of An Automation System
App 20180164759 - Hoffmann; Ralf ; et al. | 2018-06-14 |
Polarized electromagnetic relay and method for production thereof
Grant 9,368,304 - Heinrich , et al. June 14, 2 | 2016-06-14 |
Relay having two switches that can be actuated in opposite directions
Grant 9,275,815 - Hoffmann , et al. March 1, 2 | 2016-03-01 |
Semiconductor fuses in a semiconductor device comprising metal gates
Grant 9,153,684 - Heinrich , et al. October 6, 2 | 2015-10-06 |
Replacement gate approach for high-k metal gate stacks by avoiding a polishing process for exposing the placeholder material
Grant 9,034,744 - Richter , et al. May 19, 2 | 2015-05-19 |
Polarized Electromagnetic Relay and Method for Production Thereof
App 20150048909 - Heinrich; Jens ; et al. | 2015-02-19 |
Relay Having Two Switches That Can Be Actuated In Opposite Directions
App 20150042423 - Hoffmann; Ralf ; et al. | 2015-02-12 |
Semiconductor devices having through-contacts and related fabrication methods
Grant 8,951,907 - Richter , et al. February 10, 2 | 2015-02-10 |
Buried sublevel metallizations for improved transistor density
Grant 8,941,182 - Frohberg , et al. January 27, 2 | 2015-01-27 |
Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch stop materials
Grant 8,922,023 - Heinrich , et al. December 30, 2 | 2014-12-30 |
Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch stop materials
Grant 08922023 - | 2014-12-30 |
Embedding metal silicide contact regions reliably into highly doped drain and source regions by a stop implantation
Grant 8,877,597 - Heinrich , et al. November 4, 2 | 2014-11-04 |
Metallization Systems Of Semiconductor Devices Comprising A Copper/silicon Compound As A Barrier Material
App 20140264877 - Pfuetzner; Ronny ; et al. | 2014-09-18 |
Vehicle seat having a movable backrest part
Grant 8,833,855 - Dilsen , et al. September 16, 2 | 2014-09-16 |
Semiconductor device including ultra low-K (ULK) metallization stacks with reduced chip-package interaction
Grant 8,786,088 - Huisinga , et al. July 22, 2 | 2014-07-22 |
Semiconductor Device Comprising Metallization Layers Of Reduced Interlayer Capacitance By Reducing The Amount Of Etch Stop Materials
App 20140197544 - Heinrich; Jens ; et al. | 2014-07-17 |
Metallization systems of semiconductor devices comprising a copper/silicon compound as a barrier material
Grant 8,778,795 - Pfuetzner , et al. July 15, 2 | 2014-07-15 |
Integrated circuits including barrier polish stop layers and methods for the manufacture thereof
Grant 8,772,154 - Pfutzner , et al. July 8, 2 | 2014-07-08 |
Electric contact element and method for producing an electric contact element
Grant 8,749,330 - Heinrich , et al. June 10, 2 | 2014-06-10 |
Superior fill conditions in a replacement gate approach by corner rounding based on a sacrificial fill material
Grant 8,716,079 - Heinrich , et al. May 6, 2 | 2014-05-06 |
Method of forming metal gates and metal contacts in a common fill process
Grant 8,685,807 - Pfuetzner , et al. April 1, 2 | 2014-04-01 |
Methods of forming conductive structures in dielectric layers on an integrated circuit device
Grant 8,673,770 - Huisinga , et al. March 18, 2 | 2014-03-18 |
SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage
Grant 8,673,696 - Baars , et al. March 18, 2 | 2014-03-18 |
Semiconductor resistors formed at a lower height level in a semiconductor device comprising metal gates
Grant 8,658,509 - Richter , et al. February 25, 2 | 2014-02-25 |
Semiconductor device comprising contact elements with silicided sidewall regions
Grant 8,536,052 - Heinrich , et al. September 17, 2 | 2013-09-17 |
Semiconductor device comprising metal gate structures formed by a replacement gate approach and efuses including a silicide
Grant 8,497,554 - Wei , et al. July 30, 2 | 2013-07-30 |
Hybrid contact structure with low aspect ratio contacts in a semiconductor device
Grant 8,492,269 - Heinrich , et al. July 23, 2 | 2013-07-23 |
Semiconductor Fuses In A Semiconductor Device Comprising Metal Gates
App 20130140645 - Heinrich; Jens ; et al. | 2013-06-06 |
SOI semiconductor device comprising substrate diodes having a topography tolerant contact structure
Grant 8,436,425 - Heinrich , et al. May 7, 2 | 2013-05-07 |
Methods of Forming Conductive Structures in Dielectric Layers on an Integrated Circuit Device
App 20130102147 - Huisinga; Torsten ; et al. | 2013-04-25 |
Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch stop materials
Grant 8,383,510 - Heinrich , et al. February 26, 2 | 2013-02-26 |
Method for forming semiconductor fuses in a semiconductor device comprising metal gates
Grant 8,367,504 - Heinrich , et al. February 5, 2 | 2013-02-05 |
Vehicle Seat Having A Movable Backrest Part
App 20130001996 - Dilsen; Michael ; et al. | 2013-01-03 |
Electric Contact Element And Method For Producing An Electric Contact Element
App 20130002380 - Heinrich; Jens ; et al. | 2013-01-03 |
Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistors
Grant 8,338,306 - Heinrich , et al. December 25, 2 | 2012-12-25 |
Integrated Circuits Including Barrier Polish Stop Layers And Methods For The Manufacture Thereof
App 20120319285 - PFUTZNER; Egon Ronny ; et al. | 2012-12-20 |
Buried Sublevel Metallizations for Improved Transistor Density
App 20120313176 - Frohberg; Kai ; et al. | 2012-12-13 |
Cap removal in a high-k metal gate electrode structure by using a sacrificial fill material
Grant 8,329,526 - Heinrich , et al. December 11, 2 | 2012-12-11 |
Method of Forming Metal Gates and Metal Contacts in a Common Fill Process
App 20120282765 - Pfutzner; Ronny ; et al. | 2012-11-08 |
Semiconductor Device Comprising Metallization Layers of Reduced Interlayer Capacitance by Reducing the Amount of Etch Stop Materials
App 20120223437 - Heinrich; Jens ; et al. | 2012-09-06 |
SOI Semiconductor Device Comprising a Substrate Diode with Reduced Metal Silicide Leakage
App 20120217582 - BAARS; Peter ; et al. | 2012-08-30 |
Methods For Fabricating Semiconductor Devices Having Local Contacts
App 20120190195 - RICHTER; Ralf ; et al. | 2012-07-26 |
Hybrid Contact Structure With Low Aspect Ratio Contacts In A Semiconductor Device
App 20120181692 - Heinrich; Jens ; et al. | 2012-07-19 |
Methods for fabricating semiconductor devices having local contacts
Grant 8,216,928 - Richter , et al. July 10, 2 | 2012-07-10 |
Embedding Metal Silicide Contact Regions Reliably Into Highly Doped Drain and Source Regions by a Stop Implantation
App 20120161210 - Heinrich; Jens ; et al. | 2012-06-28 |
Semiconductor Device Comprising Contact Elements with Silicided Sidewall Regions
App 20120161324 - Heinrich; Jens ; et al. | 2012-06-28 |
Metallization Systems of Semiconductor Devices Comprising a Copper/Silicon Compound as a Barrier Material
App 20120153480 - Pfuetzner; Ronny ; et al. | 2012-06-21 |
Semiconductor Device Comprising a Contact Structure with Reduced Parasitic Capacitance
App 20120153405 - Heinrich; Jens ; et al. | 2012-06-21 |
Semiconductor Devices Having Through-contacts And Related Fabrication Methods
App 20120146106 - RICHTER; Ralf ; et al. | 2012-06-14 |
Reduced defectivity in contacts of a semiconductor device comprising replacement gate electrode structures by using an intermediate cap layer
Grant 8,183,139 - Marxsen , et al. May 22, 2 | 2012-05-22 |
CMP system and method using individually controlled temperature zones
Grant 8,182,709 - Heinrich , et al. May 22, 2 | 2012-05-22 |
Method of Forming Metal Silicide Regions
App 20120115326 - Frohberg; Kai ; et al. | 2012-05-10 |
Superior fill conditions in a replacement gate approach by performing a polishing process based on a sacrificial fill material
Grant 8,138,038 - Heinrich , et al. March 20, 2 | 2012-03-20 |
Semiconductor Device Including Ultra Low-K (ULK) Metallization Stacks with Reduced Chip-Package Interaction
App 20120001323 - Huisinga; Torsten ; et al. | 2012-01-05 |
Reduced Defectivity in Contacts of a Semiconductor Device Comprising Replacement Gate Electrode Structures by Using an Intermediate Cap Layer
App 20110269303 - Marxsen; Gerd ; et al. | 2011-11-03 |
SOI semiconductor device with reduced topography above a substrate window area
Grant 8,048,726 - Heinrich , et al. November 1, 2 | 2011-11-01 |
Replacement Gate Approach for High-K Metal Gate Stacks by Avoiding a Polishing Process for Exposing the Placeholder Material
App 20110244670 - Richter; Ralf ; et al. | 2011-10-06 |
Semiconductor Device Comprising Metal Gate Structures Formed by a Replacement Gate Approach and eFuses Including a Silicide
App 20110241117 - Wei; Andy ; et al. | 2011-10-06 |
Soi Semiconductor Device Comprising Substrate Diodes Having A Topography Tolerant Contact Structure
App 20110186929 - Heinrich; Jens ; et al. | 2011-08-04 |
Soi Semiconductor Device With Reduced Topography Above A Substrate Window Area
App 20110189825 - Heinrich; Jens ; et al. | 2011-08-04 |
Method for forming a metal silicide having a lower potential for containing material defects
Grant 7,985,668 - Richter , et al. July 26, 2 | 2011-07-26 |
Semiconductor Resistors Formed At A Lower Height Level In A Semiconductor Device Comprising Metal Gates
App 20110156162 - RICHTER; RALF ; et al. | 2011-06-30 |
Cap Removal In A High-k Metal Gate Electrode Structure By Using A Sacrificial Fill Material
App 20110129980 - Heinrich; Jens ; et al. | 2011-06-02 |
Corner rounding in a replacement gate approach based on a sacrificial fill material applied prior to work function metal deposition
Grant 7,951,677 - Heinrich , et al. May 31, 2 | 2011-05-31 |
Corner Rounding In A Replacement Gate Approach Based On A Sacrificial Fill Material Applied Prior To Work Function Metal Deposition
App 20110104880 - Heinrich; Jens ; et al. | 2011-05-05 |
Semiconductor Fuses In A Semiconductor Device Comprising Metal Gates
App 20110101460 - Heinrich; Jens ; et al. | 2011-05-05 |
Superior Fill Conditions In A Replacement Gate Approach By Corner Rounding Based On A Sacrificial Fill Material
App 20110073920 - Heinrich; Jens ; et al. | 2011-03-31 |
Forming Semiconductor Resistors In A Semiconductor Device Comprising Metal Gates By Increasing Etch Resistivity Of The Resistors
App 20110073956 - Heinrich; Jens ; et al. | 2011-03-31 |
Superior Fill Conditions In A Replacement Gate Approach By Performing A Polishing Process Based On A Sacrificial Fill Material
App 20110076844 - Heinrich; Jens ; et al. | 2011-03-31 |
Polishing head using zone control
Grant 7,905,764 - Heinrich , et al. March 15, 2 | 2011-03-15 |
Method Of Reducing Non-uniformities During Chemical Mechanical Polishing Of Microstructure Devices By Using Cmp Pads In A Glazed Mode
App 20100112816 - Marxsen; Gerd ; et al. | 2010-05-06 |
Cmp System And Method Using Individually Controlled Temperature Zones
App 20090170320 - Heinrich; Jens ; et al. | 2009-07-02 |
Polishing Head Using Zone Control
App 20090061745 - Heinrich; Jens ; et al. | 2009-03-05 |
Cmp System Having An Eddy Current Sensor Of Reduced Height
App 20080242195 - Heinrich; Jens ; et al. | 2008-10-02 |
Method And System For Controlling Chemical Mechanical Polishing By Taking Zone Specific Substrate Data Into Account
App 20080242196 - Marxsen; Gerd ; et al. | 2008-10-02 |
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