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Patent applications and USPTO patent grants for Heinecke; Rudolf A. H..The latest application filed is for "crystal resonator device".
Patent | Date |
---|---|
Crystal resonator device Grant 5,304,887 - Heinecke , et al. April 19, 1 | 1994-04-19 |
Pulsed plasma process for treating a substrate Grant 4,824,690 - Heinecke , et al. April 25, 1 | 1989-04-25 |
Method of surface treatment Grant 4,749,589 - Heinecke , et al. June 7, 1 | 1988-06-07 |
Surface treatment of plastics material Grant 4,684,535 - Heinecke , et al. August 4, 1 | 1987-08-04 |
Optical fibre manufacture Grant 4,568,563 - Jackson , et al. February 4, 1 | 1986-02-04 |
Metallization plant Grant 4,488,506 - Heinecke , et al. December 18, 1 | 1984-12-18 |
Method of making aluminum alloy film by implanting silicon ions followed by thermal diffusion Grant 4,482,394 - Heinecke November 13, 1 | 1984-11-13 |
Aluminum deposition on semiconductor bodies Grant 4,460,618 - Heinecke , et al. July 17, 1 | 1984-07-17 |
Process for the pyrolytic deposition of aluminum from TIBA Grant 4,433,012 - Heinecke , et al. February 21, 1 | 1984-02-21 |
Metallizing semiconductor devices Grant 4,328,261 - Heinecke , et al. May 4, 1 | 1982-05-04 |
Mask alignment for semiconductor processing Grant 4,315,692 - Heinecke , et al. February 16, 1 | 1982-02-16 |
Plasma etching Grant 4,073,669 - Heinecke , et al. February 14, 1 | 1978-02-14 |
Optically coupled semiconductive switching devices Grant 3,938,173 - Jackson , et al. February 10, 1 | 1976-02-10 |
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