Haywood; John

Patent Applications and Registrations

Patent applications and USPTO patent grants for Haywood; John.The latest application filed is for "use of 6-oxo-1,4,5,6-tetrahydropyridizin-3-carboxylic acid, 1-methyl 6-oxo-1,4,5,6-tetrahydropyridizin-3-carboxylic acid and 1-aklyl-6-oxo-1,4,5,6-tetrahydropyridazine-3-carboxylic acid for improving growth performance in plants".

Company Profile

1.12.4

Haywood; John - Howden GB
Haywood; John - Mount Elliot AU
Haywood; John - East Gosford AU
Haywood; John - Santa Clara CA
Haywood; John - Burlington CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Trademarks

Patent Activity

Patent	Date
Use Of 6-oxo-1,4,5,6-tetrahydropyridizin-3-carboxylic Acid, 1-methyl 6-oxo-1,4,5,6-tetrahydropyridizin-3-carboxylic Acid And 1-aklyl-6-oxo-1,4,5,6-tetrahydropyridazine-3-carboxylic Acid For Improving Growth Performance In Plants App 20220174953 - Unkefer; Pat J. ; et al.	2022-06-09
System for interrogating an interferometer, an interferometric system and a method for interrogating an interferometer Grant 11,067,416 - Haywood July 20, 2	2021-07-20
A System For Interrogating An Interferometer, An Interferometric System And A Method For Interrogating An Interferometer App 20200386582 - HAYWOOD; John	2020-12-10
Sensing coil and sensing unit for sagnac optical fibre current sensor Grant 8,542,366 - Haywood September 24, 2	2013-09-24
Sensing Coil And Sensing Unit For Sagnac Optical Fibre Current Sensor App 20110051145 - Haywood; John	2011-03-03
Signal processing for passive interferometry Grant 7,068,872 - Bassett , et al. June 27, 2	2006-06-27
Signal processing for passive interferometry App 20040189997 - Bassett, Ian ; et al.	2004-09-30
Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate Grant 6,759,337 - Aronowitz , et al. July 6, 2	2004-07-06
Process For Forming Thin Gate Oxide With Enhanced Reliability By Nitridation Of Upper Surface Of Gate Of Oxide To Form Barrier Of Nitrogen Atoms In Upper Surface Region Of Gate Oxide, And Resulting Product Grant 6,413,881 - Aronowitz , et al. July 2, 2	2002-07-02
Composite semiconductor gate dielectrics Grant 6,087,229 - Aronowitz , et al. July 11, 2	2000-07-11
Method of forming variable thickness gate dielectrics Grant 6,033,998 - Aronowitz , et al. March 7, 2	2000-03-07
Fibre optic transducer incorporating an extraneous factor compensation referencing system Grant 6,034,522 - Haywood March 7, 2	2000-03-07
Process for forming photoresist mask over integrated circuit structures with critical dimension control Grant 5,902,704 - Schoenborn , et al. May 11, 1	1999-05-11
Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same Grant 5,837,598 - Aronowitz , et al. November 17, 1	1998-11-17
High dynamic range digitizer Grant 5,422,643 - Chu , et al. June 6, 1	1995-06-06

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