| Patent | Date |
|---|
Semiconductor Device And Method Of Manufacturing The Same
App 20210249353 - SAYAMA; Hirokazu ; et al. | 2021-08-12 |
Nonvolatile semiconductor storage device with charge storage layer and its manufacturing method
Grant 8,298,900 - Hayashi October 30, 2 | 2012-10-30 |
Nonvolatile semiconductor memory device
Grant 8,207,572 - Mizushima , et al. June 26, 2 | 2012-06-26 |
Nonvolatile semiconductor storage device with charge storage layer and its manufacturing method
App 20120058618 - Hayashi; Fumihiko | 2012-03-08 |
Nonvolatile semiconductor storage device with charge storage layer and its manufacturing method
Grant 7,999,306 - Hayashi August 16, 2 | 2011-08-16 |
Semiconductor memory device having reference transistor and method of manufacturing the same
Grant 7,928,491 - Nakata , et al. April 19, 2 | 2011-04-19 |
Nonvolatile Semiconductor Memory Device And Manufacturing Method Therefor
App 20110024826 - MIZUSHIMA; HIROAKI ; et al. | 2011-02-03 |
Tetrahydro-naphthalene and urea derivatives
Grant 7,615,557 - Bouchon , et al. November 10, 2 | 2009-11-10 |
Nonvolatile semiconductor storage device with charge storage layer and its manufacturing method
App 20090224305 - Hayashi; Fumihiko | 2009-09-10 |
Nonvolatile semiconductor storage device with charge storage layer and its manufacturing method
App 20090224306 - Hayashi; Fumihiko | 2009-09-10 |
Bicyclic Amide, Carbamate or Urea Derivatives as Vanilloid Receptor Modulators
App 20080058377 - Mogi; Muneto ; et al. | 2008-03-06 |
Tetradydro-Naphthalene And Urea Derivatives
App 20080045546 - Bouchon; Axel ; et al. | 2008-02-21 |
Semiconductor memory device having reference transistor and method of manufacturing the same
App 20070228444 - Nakata; Masashi ; et al. | 2007-10-04 |
Tetrahydro-naphthalene and urea derivatives
App 20070167458 - Bouchon; Axel ; et al. | 2007-07-19 |
Regulation of human transient receptor potential channel
App 20050176010 - Shiroo, Masahiro ; et al. | 2005-08-11 |
Semiconductor device, nonvolatile semiconductor storage apparatus using the device, and manufacture method of the device
Grant 6,917,071 - Hayashi July 12, 2 | 2005-07-12 |
Semiconductor device having a memory cell region and a peripheral circuit region and method of manufacturing thereof
Grant 6,849,490 - Hayashi February 1, 2 | 2005-02-01 |
Semiconductor device, nonvolatile semiconductor storage apparatus using the device, and manufacture method of the device
App 20030141538 - Hayashi, Fumihiko | 2003-07-31 |
Method for manufacturing non-volatile semiconductor memory device
App 20030119262 - Hayashi, Fumihiko | 2003-06-26 |
Semiconductor device
App 20010048130 - Hayashi, Fumihiko | 2001-12-06 |
Semiconductor device, nonvolatile semiconductor storage apparatus using the device, and manufacuture method of the device
App 20010003366 - Hayashi, Fumihiko | 2001-06-14 |
SRAM having P-channel TFT as load element with less series-connected high resistance
Grant 6,093,597 - Hayashi July 25, 2 | 2000-07-25 |
SRAM having P-channel TFT as load element with less series-connected high resistance
Grant 5,973,369 - Hayashi October 26, 1 | 1999-10-26 |
Thin-film transistor and SRAM memory cell equipped therewith
Grant 5,965,905 - Hayashi October 12, 1 | 1999-10-12 |
VLSIC semiconductor memory device with cross-coupled inverters with improved stability to errors
Grant 5,536,960 - Hayashi July 16, 1 | 1996-07-16 |
Semiconductor memory device having a meshlike grounding wiring
Grant 5,334,863 - Ohkawa , et al. August 2, 1 | 1994-08-02 |
Static type random access memory device with stacked memory cell free from parasitic diode
Grant 5,331,170 - Hayashi July 19, 1 | 1994-07-19 |
Laser recording film
Grant 4,702,958 - Itoh , et al. October 27, 1 | 1987-10-27 |
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