Hayama; Nobuyuki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hayama; Nobuyuki.The latest application filed is for "hetero-junction bipolar phototransistor".

Company Profile

0.8.8

Hayama; Nobuyuki - Tsukuba N/A JP
Hayama; Nobuyuki - Ibaraki JP
Hayama; Nobuyuki - Minato-ku JP
Hayama, Nobuyuki - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Hetero-junction bipolar phototransistor with improved noise characteristic Grant 9,076,906 - Ogura , et al. July 7, 2	2015-07-07
Hetero-junction Bipolar Phototransistor App 20110291158 - Ogura; Mutsuo ; et al.	2011-12-01
Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances Grant 6,765,241 - Ohno , et al. July 20, 2	2004-07-20
Semiconductor device App 20030151064 - Ohno, Yasuo ; et al.	2003-08-14
Hetero-junction field effect transistor having an intermediate layer Grant 6,552,373 - Ando , et al. April 22, 2	2003-04-22
Semiconductor device, semiconductor integrated circuit, and method for manufacturing semiconductor device App 20030034504 - Azuma, Kouji ; et al.	2003-02-20
Semiconductor device with schottky electrode having high schottky barrier Grant 6,492,669 - Nakayama , et al. December 10, 2	2002-12-10
Semiconductor device Grant 6,465,814 - Kasahara , et al. October 15, 2	2002-10-15
Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate Grant 6,441,391 - Ohno , et al. August 27, 2	2002-08-27
Semiconductor device App 20020047113 - Ohno, Yasuo ; et al.	2002-04-25
Method of manufacturing semiconductor device with sidewall metal layers App 20020048889 - Hayama, Nobuyuki ; et al.	2002-04-25
Semiconductor device App 20020017648 - Kasahara, Kensuke ; et al.	2002-02-14
Semiconductor device with schottky electrode having high schottky barrier App 20020017696 - Nakayama, Tatsuo ; et al.	2002-02-14
Hetero-junction field effect transistor having an intermediate layer App 20010040247 - Ando, Yuji ; et al.	2001-11-15
Magnetoresistive pressure-sensing device for automotive electronic engine control systems Grant 4,217,783 - Ito , et al. August 19, 1	1980-08-19

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.