HAYAKAWA; Tsutomu

Patent Applications and Registrations

Patent applications and USPTO patent grants for HAYAKAWA; Tsutomu.The latest application filed is for "oh radical measuring device and oh radical measuring method".

Company Profile

0.11.14

HAYAKAWA; Tsutomu - Tokyo JP
Hayakawa; Tsutomu - Chuo-ku JP
Hayakawa; Tsutomu - Shizuoka JP
Hayakawa; Tsutomu - Saitama JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Oh Radical Measuring Device And Oh Radical Measuring Method App 20210164909 - KURATA; Takao ; et al.	2021-06-03
Semiconductor memory device and fabrication method thereof Grant 7,919,767 - Hayakawa April 5, 2	2011-04-05
Phase-change memory device with minimized reduction in thermal efficiency and method of manufacturing the same Grant 7,755,075 - Hayakawa July 13, 2	2010-07-13
Phase change memory device and method of manufacturing the device Grant 7,728,321 - Hayakawa June 1, 2	2010-06-01
Semiconductor memory device and fabrication method thereof Grant 7,723,717 - Hayakawa May 25, 2	2010-05-25
Semiconductor device and method of producing the same Grant 7,671,360 - Sato , et al. March 2, 2	2010-03-02
Phase change memory device and method for manufacturing phase change memory device Grant 7,532,507 - Hayakawa May 12, 2	2009-05-12
Phase-change memory device and method of manufacturing same Grant 7,498,601 - Hayakawa , et al. March 3, 2	2009-03-03
Phase-change memory device and method of manufacturing same Grant 7,368,802 - Hayakawa May 6, 2	2008-05-06
Phase-change memory device having heater electrode with improved heat generation efficiency App 20080067490 - Hayakawa; Tsutomu	2008-03-20
Semiconductor Device And Method Of Producing The Same App 20080061282 - Sato; Natsuki ; et al.	2008-03-13
Semiconductor memory device and fabrication method thereof App 20080048170 - Hayakawa; Tsutomu	2008-02-28
Phase-change Memory Device With Minimized Reduction In Thermal Efficiency And Method Of Manufacturing The Same App 20080042118 - Hayakawa; Tsutomu	2008-02-21
Semiconductor memory device and fabrication method thereof App 20080006813 - Hayakawa; Tsutomu	2008-01-10
Footwear App 20070294923 - Hayakawa; Tsutomu	2007-12-27
Phase Change Memory Device And Method For Manufacturing Phase Change Memory Device App 20070165452 - Hayakawa; Tsutomu	2007-07-19
Phase-change Memory Device And Method Of Manufacturing Same App 20070120107 - HAYAKAWA; Tsutomu	2007-05-31
Phase-change Memory Device And Method Of Manufacturing Same App 20070120106 - HAYAKAWA; Tsutomu ; et al.	2007-05-31
Phase change memory device and method of manufacturing the device App 20070069249 - Hayakawa; Tsutomu	2007-03-29
Cogeneration device Grant 6,948,319 - Hayakawa , et al. September 27, 2	2005-09-27
Gate electrode and method of fabricating the same Grant 6,861,319 - Hoshino , et al. March 1, 2	2005-03-01
Cogeneration device App 20040079088 - Hayakawa, Tsutomu ; et al.	2004-04-29
Method for manufacturing a semiconductor device having a layered gate electrode Grant 6,723,608 - Hayakawa April 20, 2	2004-04-20
Method for manufacturing a semiconductor device having a layered gate electrode App 20030190798 - Hayakawa, Tsutomu	2003-10-09
Gate electrode and method of fabricating the same App 20030146457 - Hoshino, Akira ; et al.	2003-08-07

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