loadpatents
name:-0.0067808628082275
name:-0.012523889541626
name:-0.00041794776916504
Hawley; Frank W. Patent Filings

Hawley; Frank W.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hawley; Frank W..The latest application filed is for "low leakage resistive random access memory cells and processes for fabricating same".

Company Profile
0.18.11
  • Hawley; Frank W. - Campbell CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Low Leakage Resistive Random Access Memory Cells And Processes For Fabricating Same
App 20170179382 - McCollum; John L. ;   et al.
2017-06-22
Front to back resistive random access memory cells
Grant 8,723,151 - Greene , et al. May 13, 2
2014-05-13
Front To Back Resistive Random Access Memory Cells
App 20130221316 - Greene; Jonathan ;   et al.
2013-08-29
Front to back resistive random access memory cells
Grant 8,415,650 - Greene , et al. April 9, 2
2013-04-09
Back to back resistive random access memory cells
Grant 8,269,204 - Greene , et al. September 18, 2
2012-09-18
Resistive RAM devices for programmable logic devices
Grant 8,269,203 - Greene , et al. September 18, 2
2012-09-18
Back To Back Resistive Random Access Memory Cells
App 20110001116 - Greene; Jonathan ;   et al.
2011-01-06
Resistive Ram Devices For Programmable Logic Devices
App 20110001115 - Greene; Jonathan ;   et al.
2011-01-06
Front To Back Resistive Random Access Memory Cells
App 20110001108 - Greene; Jonathan ;   et al.
2011-01-06
Amorphous Carbon Metal-to-metal Antifuse With Adhesion Promoting Layers
App 20080197450 - Hawley; Frank W. ;   et al.
2008-08-21
Amorphous carbon metal-to-metal antifuse with adhesion promoting layers
Grant 7,358,589 - Hawley , et al. April 15, 2
2008-04-15
Amorphous carbon metal-to-metal antifuse with adhesion promoting layers
Grant 6,965,156 - Hawley , et al. November 15, 2
2005-11-15
Method of making a MOS transistor having improved total radiation-induced leakage current
App 20050090047 - Hawley, Frank W. ;   et al.
2005-04-28
MOS transistor having improved total radiation-induced leakage current
App 20050090073 - Hawley, Frank W. ;   et al.
2005-04-28
Metal-to-metal antifuse employing carbon-containing antifuse material
App 20030205723 - Hawley, Frank W. ;   et al.
2003-11-06
Metal-to-metal antifuse employing carbon-containing antifuse material
App 20030062596 - Hawley, Frank W. ;   et al.
2003-04-03
Raised tungsten plug antifuse and fabrication processes
Grant 6,437,365 - Hawley , et al. August 20, 2
2002-08-20
Raised tungsten plug antifuse and fabrication processes
Grant 6,124,193 - Hawley , et al. September 26, 2
2000-09-26
Metal-to-metal via-type antifuse
Grant 5,962,910 - Hawley , et al. October 5, 1
1999-10-05
Fabrication process for raised tungsten plug antifuse
Grant 5,804,500 - Hawley , et al. September 8, 1
1998-09-08
Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
Grant 5,780,323 - Forouhi , et al. July 14, 1
1998-07-14
Reduced leakage antifuse fabrication method
Grant 5,763,299 - McCollum , et al. June 9, 1
1998-06-09
Above via metal-to-metal antifuses incorporating a tungsten via plug
Grant 5,763,898 - Forouhi , et al. June 9, 1
1998-06-09
Method of programming an improved metal-to-metal via-type antifuse
Grant 5,741,720 - Hawley , et al. April 21, 1
1998-04-21
Metal-to-metal antifuse with conductive
Grant 5,614,756 - Forouhi , et al. March 25, 1
1997-03-25
Method of fabricating an antifuse element having an etch-stop dielectric layer
Grant 5,464,790 - Hawley November 7, 1
1995-11-07
Metal-to-metal antifuse including etch stop layer
Grant 5,381,035 - Chen , et al. January 10, 1
1995-01-10

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