Hattangady; Sunil

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hattangady; Sunil.The latest application filed is for "flash memory array integrally formed with another device and method of manufacture therefor".

Company Profile

0.4.8

Hattangady; Sunil - McKinney TX

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures Grant 6,780,719 - Niimi , et al. August 24, 2	2004-08-24
Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile Grant 6,632,747 - Niimi , et al. October 14, 2	2003-10-14
Flash memory array integrally formed with another device and method of manufacture therefor App 20030173615 - San, Kemal Tamer ; et al.	2003-09-18
Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates Grant 6,610,614 - Niimi , et al. August 26, 2	2003-08-26
Semiconductor device having a dielectric layer with a uniform nitrogen profile App 20030157773 - Hu, Jerry ; et al.	2003-08-21
Semiconductor device having a dielectric layer with a uniform nitrogen profile App 20030080389 - Hu, Jerry ; et al.	2003-05-01
Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures App 20020197886 - Niimi, Hiroaki ; et al.	2002-12-26
Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates App 20020197880 - Niimi, Hiroaki ; et al.	2002-12-26
Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile App 20020197883 - Niimi, Hiroaki ; et al.	2002-12-26
Integrated dielectric and method App 20020025626 - Hattangady, Sunil ; et al.	2002-02-28
Controllable oxidation technique for high quality ultra-thin gate oxide App 20010001074 - Hwang, Ming ; et al.	2001-05-10
Method of forming thin silicon nitride or silicon oxynitride gate dielectrics Grant 6,136,654 - Kraft , et al. October 24, 2	2000-10-24

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