| Patent | Date |
|---|
Silicon Carbide Semiconductor Device And Power Converter
App 20220254906 - NAGAHISA; Yuichi ; et al. | 2022-08-11 |
Silicon carbide semiconductor device and power converter
Grant 11,355,627 - Nagahisa , et al. June 7, 2 | 2022-06-07 |
Semiconductor device and power converter
Grant 11,355,629 - Sugawara , et al. June 7, 2 | 2022-06-07 |
Semiconductor Device And Power Converter
App 20220149167 - FUKUI; Yutaka ; et al. | 2022-05-12 |
Semiconductor device
Grant 11,309,416 - Hatta , et al. April 19, 2 | 2022-04-19 |
Silicon Carbide Semiconductor Device And Power Converter
App 20220102503 - HATTA; Hideyuki ; et al. | 2022-03-31 |
Semiconductor device and power converter
Grant 11,271,084 - Fukui , et al. March 8, 2 | 2022-03-08 |
Silicon carbide semiconductor device and manufacturing method of same
Grant 11,251,299 - Tanaka , et al. February 15, 2 | 2022-02-15 |
Silicon Carbide Semiconductor Device And Power Converter
App 20220045204 - HATTA; Hideyuki ; et al. | 2022-02-10 |
Silicon Carbide Semiconductor Device And Method Of Manufacturing Same
App 20220037474 - TANAKA; Rina ; et al. | 2022-02-03 |
Semiconductor device
Grant 11,222,973 - Hino , et al. January 11, 2 | 2022-01-11 |
Semiconductor Device
App 20220005947 - SUGAWARA; Katsutoshi ; et al. | 2022-01-06 |
Silicon carbide semiconductor device and power converter
Grant 11,189,720 - Hatta , et al. November 30, 2 | 2021-11-30 |
Semiconductor Device And Power Converter
App 20210288156 - FUKUI; Yutaka ; et al. | 2021-09-16 |
Silicon Carbide Semiconductor Device Having A Conductive Layer Formed Above A Bottom Surface Of A Well Region So As Not To Be In Ohmic Connection With The Well Region And Power Converter Including The Same
App 20210226052 - NAGAHISA; Yuichi ; et al. | 2021-07-22 |
Silicon carbide semiconductor device and power converter
Grant 11,049,963 - Hino , et al. June 29, 2 | 2021-06-29 |
Semiconductor Device And Power Converter
App 20210135002 - SUGAWARA; Katsutoshi ; et al. | 2021-05-06 |
Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same
Grant 10,991,822 - Nagahisa , et al. April 27, 2 | 2021-04-27 |
Silicon Carbide Semiconductor Device And Manufacturing Method Of Same
App 20210043765 - TANAKA; Rina ; et al. | 2021-02-11 |
Silicon Carbide Semiconductor Device And Power Converter
App 20200321462 - HINO; Shiro ; et al. | 2020-10-08 |
Silicon Carbide Semiconductor Device And Power Converter
App 20200312995 - NAGAHISA; Yuichi ; et al. | 2020-10-01 |
Semiconductor Device
App 20200295183 - HATTA; Hideyuki ; et al. | 2020-09-17 |
Silicon Carbide Semiconductor Device And Power Converter
App 20200295177 - HINO; Shiro ; et al. | 2020-09-17 |
Silicon Carbide Semiconductor Device, Power Converter, Method Of Manufacturing Silicon Carbide Semiconductor Device, And Method
App 20200194554 - ADACHI; Kohei ; et al. | 2020-06-18 |
Silicon Carbide Semiconductor Device And Power Converter
App 20190371936 - NAGAHISA; Yuichi ; et al. | 2019-12-05 |
Silicon Carbide Semiconductor Device And Power Converter
App 20190371935 - HATTA; Hideyuki ; et al. | 2019-12-05 |
Semiconductor Device
App 20190181259 - HINO; Shiro ; et al. | 2019-06-13 |
Semiconductor device
Grant 9,825,126 - Hatta , et al. November 21, 2 | 2017-11-21 |
Semiconductor Device
App 20170229535 - HATTA; Hideyuki ; et al. | 2017-08-10 |
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