Hatade; Kazunari

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hatade; Kazunari.The latest application filed is for "semiconductor device".

Company Profile

0.17.19

Hatade; Kazunari - Tokyo N/A JP
Hatade; Kazunari - Chiyoda-ku JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device with peripheral base region connected to main electrode Grant 8,692,323 - Hatade , et al. April 8, 2	2014-04-08
Semiconductor Device App 20130248926 - HATADE; Kazunari	2013-09-26
Semiconductor device Grant 8,421,157 - Hatade April 16, 2	2013-04-16
Semiconductor device Grant 8,183,631 - Hatade , et al. May 22, 2	2012-05-22
Semiconductor Device App 20120080744 - HATADE; Kazunari ; et al.	2012-04-05
Semiconductor device Grant 8,008,746 - Hatade August 30, 2	2011-08-30
Semiconductor Device App 20110127575 - HATADE; Kazunari	2011-06-02
Semiconductor device Grant 7,902,634 - Hatade March 8, 2	2011-03-08
Semiconductor Device App 20110018028 - HATADE; Kazunari	2011-01-27
Semiconductor device Grant 7,829,955 - Hatade November 9, 2	2010-11-09
Semiconductor Device App 20100219447 - HATADE; Kazunari	2010-09-02
Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage Grant 7,777,279 - Hatade , et al. August 17, 2	2010-08-17
Semiconductor device having spaced unit regions and heavily doped semiconductor layer Grant 7,745,906 - Hatade June 29, 2	2010-06-29
Semiconductor device Grant 7,652,350 - Hatade January 26, 2	2010-01-26
Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage Grant 7,545,005 - Hatade , et al. June 9, 2	2009-06-09
Semiconductor Device Capable Of Avoiding Latchup Breakdown Resulting From Negative Variation Of Floating Offset Voltage App 20080272440 - HATADE; Kazunari ; et al.	2008-11-06
Semiconductor Device Capable Of Avoiding Latchup Breakdown Resulting From Negative Variation Of Floating Offset Voltage App 20080265334 - HATADE; Kazunari ; et al.	2008-10-30
Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage Grant 7,408,228 - Hatade , et al. August 5, 2	2008-08-05
Semiconductor Device App 20080006906 - HATADE; Kazunari	2008-01-10
Semiconductor Device App 20070176205 - Hatade; Kazunari	2007-08-02
Semiconductor Device App 20070138569 - HATADE; Kazunari	2007-06-21
Semiconductor Device Capable Of Avoiding Latchup Breakdown Resulting From Negative Variation Of Floating Offset Voltage App 20070114614 - Hatade; Kazunari ; et al.	2007-05-24
Semiconductor Device App 20070096166 - HATADE; KAZUNARI ; et al.	2007-05-03
Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage Grant 7,190,034 - Hatade , et al. March 13, 2	2007-03-13
Semiconductor device having enhanced di/dt tolerance and dV/dt tolerance Grant 7,180,106 - Hatade , et al. February 20, 2	2007-02-20
Semiconductor device Grant 7,122,875 - Hatade October 17, 2	2006-10-17
Semiconductor device App 20060118860 - Hatade; Kazunari	2006-06-08
Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage App 20060011960 - Hatade; Kazunari ; et al.	2006-01-19
Semiconductor device capable of avoiding latchup breakdown resulting from negative varation of floating offset voltage Grant 6,979,850 - Hatade December 27, 2	2005-12-27
Semiconductor device App 20050161761 - Hatade, Kazunari	2005-07-28
Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage App 20040189353 - Hatade, Kazunari ; et al.	2004-09-30
Semiconductor device App 20030132499 - Hatade, Kazunari ; et al.	2003-07-17
Semiconductor device App 20010050383 - Hatade, Kazunari ; et al.	2001-12-13

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