Hata; Tomonobu
Patent Applications and Registrations
Patent applications and USPTO patent grants for Hata; Tomonobu.The latest application filed is for "gradient structure material and functional element using the same".
- Hata; Tomonobu - Ishikawa JP
- Hata; Tomonobu - Kanazawa JP
- Hata, Tomonobu - Kanazawa-shi JP
| Patent | Date |
|---|---|
| Gradient Structure Material and Functional Element Using the Same App 20070252113 - Hata; Tomonobu ; et al. | 2007-11-01 |
| Method for epitaxially growing crystalline insulation layer on crystalline silicon substrate while simultaneously growing silicon oxide, nitride, or oxynitride Grant 6,683,012 - Hata , et al. January 27, 2 | 2004-01-27 |
| Substrate for semiconductor device and method of manufacturing the same App 20020177328 - Hata, Tomonobu ; et al. | 2002-11-28 |
| Substrate for semiconductor device and method of manufacturing the same App 20010024885 - Hata, Tomonobu ; et al. | 2001-09-27 |
| Method of forming a crystalline insulation layer on a silicon substrate Grant 6,232,242 - Hata , et al. May 15, 2 | 2001-05-15 |
| Magnetron sputtering method and apparatus Grant 4,971,674 - Hata November 20, 1 | 1990-11-20 |
| Surface treatment method Grant 4,880,515 - Yoshikawa , et al. November 14, 1 | 1989-11-14 |
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