| Patent | Date |
|---|
Sensor Device
App 20180108609 - NEMOTO; Takatsugu ; et al. | 2018-04-19 |
Sensor device having inductors, analog and logic circuits for detecting power flowing through a powerline
Grant 9,875,962 - Nemoto , et al. January 23, 2 | 2018-01-23 |
Sensor Device
App 20170186689 - NEMOTO; Takatsugu ; et al. | 2017-06-29 |
Sensor device having inductors for detecting power flowing through a power line
Grant 9,632,119 - Nemoto , et al. April 25, 2 | 2017-04-25 |
Sensor device with inductors
Grant 9,529,022 - Nemoto , et al. December 27, 2 | 2016-12-27 |
Semiconductor device having an inductor surrounds the internal circuit
Grant 9,245,840 - Hashimoto , et al. January 26, 2 | 2016-01-26 |
Sensor Device
App 20150061660 - NEMOTO; Takatsugu ; et al. | 2015-03-05 |
Sensor Device
App 20150061645 - Nemoto; Takatsugu ; et al. | 2015-03-05 |
Semiconductor Device
App 20150048481 - HASHIMOTO; Takasuke ; et al. | 2015-02-19 |
Semiconductor device
Grant 8,907,460 - Hashimoto , et al. December 9, 2 | 2014-12-09 |
Semiconductor device
Grant 8,786,048 - Okushima , et al. July 22, 2 | 2014-07-22 |
Semiconductor Device
App 20140078709 - HASHIMOTO; Takasuke ; et al. | 2014-03-20 |
Semiconductor Device
App 20130147011 - OKUSHIMA; Mototsugu ; et al. | 2013-06-13 |
Semiconductor device
Grant 8,395,234 - Okushima , et al. March 12, 2 | 2013-03-12 |
Semiconductor device
Grant 8,310,034 - Uchida , et al. November 13, 2 | 2012-11-13 |
Semiconductor Device
App 20110049672 - OKUSHIMA; Mototsugu ; et al. | 2011-03-03 |
Semiconductor device
App 20100314727 - Uchida; Shinichi ; et al. | 2010-12-16 |
Method of manufacturing semiconductor device
App 20100009510 - Hashimoto; Takasuke | 2010-01-14 |
Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improved
Grant 6,680,234 - Hashimoto January 20, 2 | 2004-01-20 |
Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improved
App 20030001235 - Hashimoto, Takasuke | 2003-01-02 |
Method of manufacturing semiconductor device with no parasitic barrier
Grant 6,337,251 - Hashimoto January 8, 2 | 2002-01-08 |
Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improved
App 20010052634 - Hashimoto, Takasuke | 2001-12-20 |
Process of fabricating semiconductor device having gettering site layer between insulating layer and active semiconductor layer
Grant 6,001,711 - Hashimoto December 14, 1 | 1999-12-14 |
Hetero-junction type bipolar transistor
Grant 5,557,118 - Hashimoto September 17, 1 | 1996-09-17 |
Semiconductor device having an improved low resistive contact
Grant 5,475,257 - Hashimoto , et al. December 12, 1 | 1995-12-12 |
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