Hashimoto; Paul

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hashimoto; Paul.The latest application filed is for "ohmic metal contact protection using an encapsulation layer".

Company Profile

0.11.11

Hashimoto; Paul - Los Angeles CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Ohmic metal contact protection using an encapsulation layer Grant 8,030,688 - Hussain , et al. October 4, 2	2011-10-04
Process for fabricating ultra-low contact resistances in GaN-based devices Grant 7,700,974 - Nguyen , et al. April 20, 2	2010-04-20
Ohmic Metal Contact Protection Using An Encapsulation Layer App 20090250725 - HUSSAIN; Tahir ; et al.	2009-10-08
High power-low noise microwave GaN heterojunction field effect transistor Grant 7,598,131 - Micovic , et al. October 6, 2	2009-10-06
Ohmic metal contact and channel protection in GaN devices using an encapsulation layer Grant 7,566,916 - Hussain , et al. July 28, 2	2009-07-28
High power-low noise microwave GaN heterojunction field effect transistor Grant 7,470,941 - Micovic , et al. December 30, 2	2008-12-30
Non-planar nitride-based heterostructure field effect transistor Grant 7,247,893 - Moon , et al. July 24, 2	2007-07-24
GaN DHFET Grant 7,098,490 - Micovic , et al. August 29, 2	2006-08-29
Method for fabricating a non-planar nitride-based heterostructure field effect transistor App 20050194602 - Moon, Jeong Sun ; et al.	2005-09-08
Process for fabricating ultra-low contact resistances in GaN-based devices App 20050184309 - Nguyen, Nguyen Xuan ; et al.	2005-08-25
Process for fabricating ultra-low contact resistances in GaN-based devices Grant 6,897,137 - Nguyen , et al. May 24, 2	2005-05-24
Ohmic metal contact and channel protection in GaN devices using an encapsulation layer Grant 6,884,704 - Hussain , et al. April 26, 2	2005-04-26
Ohmic metal contact and channel protection in GaN devices using an encapsulation layer App 20050048747 - Hussain, Tahir ; et al.	2005-03-03
Ohmic contacts for high electron mobility transistors and a method of making the same Grant 6,852,615 - Micovic , et al. February 8, 2	2005-02-08
Method for fabricating a non-planar nitride-based heterostructure field effect transistor Grant 6,830,945 - Moon , et al. December 14, 2	2004-12-14
GaN DHFET App 20040238842 - Micovic, Miroslav ; et al.	2004-12-02
Process for fabricating ultra-low contact resistances in GaN-based devices App 20040094759 - Nguyen, Nguyen Xuan ; et al.	2004-05-20
Method for fabricating a non-planar nitride-based heterostructure field effect transistor App 20040051112 - Moon, Jeong Sun ; et al.	2004-03-18
Ohmic metal contact and channel protection in GaN devices using an encapsulation layer App 20040029330 - Hussain, Tahir ; et al.	2004-02-12
Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate App 20040021152 - Nguyen, Chanh ; et al.	2004-02-05
Ohmic contacts for high electron mobility transistors and a method of making the same App 20030227027 - Micovic, Miroslav ; et al.	2003-12-11
High power-low noise microwave GaN heterojunction field effet transistor App 20030218183 - Micovic, Miroslav ; et al.	2003-11-27

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