| Patent | Date |
|---|
Contact structure in a memory device
Grant 8,786,101 - Harshfield July 22, 2 | 2014-07-22 |
Contact Structure In A Memory Device
App 20130140703 - Harshfield; Steven T. | 2013-06-06 |
Contact structure in a memory device
Grant 8,362,625 - Harshfield January 29, 2 | 2013-01-29 |
Memory Devices Having Contact Features
App 20120080798 - Harshfield; Steven T. | 2012-04-05 |
Memory devices having contact features
Grant 8,076,783 - Harshfield December 13, 2 | 2011-12-13 |
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
Grant 8,017,453 - Harshfield September 13, 2 | 2011-09-13 |
Method And Apparatus For Forming An Integrated Circuit Electrode Having A Reduced Contact Area
App 20100184258 - Harshfield; Steven T. | 2010-07-22 |
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
Grant 7,687,796 - Harshfield March 30, 2 | 2010-03-30 |
Resistance variable memory cells
Grant 7,687,793 - Harshfield , et al. March 30, 2 | 2010-03-30 |
Memory elements and methods for making same
Grant RE40,842 - Harshfield July 14, 2 | 2009-07-14 |
Memory Devices Having Contact Features
App 20090152737 - Harshfield; Steven T. | 2009-06-18 |
Memory elements
Grant 7,504,730 - Harshfield March 17, 2 | 2009-03-17 |
Memory elements and methods for making same
App 20080017953 - Harshfield; Steven T. | 2008-01-24 |
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
App 20080012000 - Harshfield; Steven T. | 2008-01-17 |
Resistance Variable Memory Cells
App 20070235712 - Harshfield; Steven T. ; et al. | 2007-10-11 |
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
Grant 7,271,440 - Harshfield September 18, 2 | 2007-09-18 |
Method of making a memory cell
Grant 7,235,419 - Harshfield , et al. June 26, 2 | 2007-06-26 |
Memory cell with selective deposition of refractory metals
App 20070012987 - McTeer; Allen ; et al. | 2007-01-18 |
PCRAM memory cell and method of making same
Grant 7,102,150 - Harshfield , et al. September 5, 2 | 2006-09-05 |
Memory cell with selective deposition of refractory metals
Grant 7,078,755 - McTeer , et al. July 18, 2 | 2006-07-18 |
PCRAM memory cell and method of making same
Grant 7,071,021 - Harshfield , et al. July 4, 2 | 2006-07-04 |
Method of making a memory cell
App 20060099822 - Harshfield; Steven T. ; et al. | 2006-05-11 |
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
App 20050029587 - Harshfield, Steven T. | 2005-02-10 |
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
Grant 6,831,330 - Harshfield December 14, 2 | 2004-12-14 |
Memory elements and methods for making same
App 20040124503 - Harshfield, Steven T. | 2004-07-01 |
Method of forming a contact structure in a semiconductor device
Grant 6,607,974 - Harshfield August 19, 2 | 2003-08-19 |
Memory elements and methods for making same
Grant 6,563,156 - Harshfield May 13, 2 | 2003-05-13 |
PCRAM memory cell and method of making same
App 20020190289 - Harshfield, Steven T. ; et al. | 2002-12-19 |
Memory cell with selective deposition of refractory metals
App 20020179956 - McTeer, Allen ; et al. | 2002-12-05 |
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
App 20020179896 - Harshfield, Steven T. | 2002-12-05 |
PCRAM memory cell and method of making same
App 20020168852 - Harshfield, Steven T. ; et al. | 2002-11-14 |
Memory elements and methods for making same
App 20020160551 - Harshfield, Steven T. | 2002-10-31 |
Selective cap layers over recessed polysilicon plugs
Grant 6,455,424 - McTeer , et al. September 24, 2 | 2002-09-24 |
Method of forming a contact structure in a semiconductor device
Grant 6,440,837 - Harshfield August 27, 2 | 2002-08-27 |
Hemispherical grained silicon on conductive nitride
Grant 6,440,795 - Harshfield August 27, 2 | 2002-08-27 |
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
Grant 6,420,725 - Harshfield July 16, 2 | 2002-07-16 |
Memory elements and methods for making same
App 20020086524 - Harshfield, Steven T. | 2002-07-04 |
Methods for forming ZPROM using spacers as an etching mask
Grant 6,413,812 - Harshfield July 2, 2 | 2002-07-02 |
ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask
App 20020031887 - Harshfield, Steven T. | 2002-03-14 |
Method of making an integrated circuit electrode having a reduced contact area
Grant 6,117,720 - Harshfield September 12, 2 | 2000-09-12 |
Small pores defined by a disposable internal spacer for use in chalcogenide memories
Grant 6,111,264 - Wolstenholme , et al. August 29, 2 | 2000-08-29 |
Contact structure and memory element incorporating the same
Grant 6,031,287 - Harshfield February 29, 2 | 2000-02-29 |
Method of forming a hemispherical grained silicon on refractory metal nitride
Grant 5,899,725 - Harshfield May 4, 1 | 1999-05-04 |
Memory array having a multi-state element and method for forming such array or cells thereof
Grant 5,869,843 - Harshfield February 9, 1 | 1999-02-09 |
ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask
Grant 5,851,882 - Harshfield December 22, 1 | 1998-12-22 |
Integrated circuit memory device
Grant 5,818,749 - Harshfield October 6, 1 | 1998-10-06 |
Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
Grant 5,814,527 - Wolstenholme , et al. September 29, 1 | 1998-09-29 |
Zener programmable read only memory
Grant 5,646,879 - Harshfield July 8, 1 | 1997-07-08 |
Hemispherical grained silicon on refractory metal nitride
Grant 5,612,558 - Harshfield March 18, 1 | 1997-03-18 |
Method of forming a contact using a trench and an insulation layer during the formation of a semiconductor device
Grant 5,492,853 - Jeng , et al. February 20, 1 | 1996-02-20 |
Zener programmable read only memory
Grant 5,379,250 - Harshfield January 3, 1 | 1995-01-03 |
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