Patent | Date |
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Extrinsic Field Termination Structures For Improving Reliability Of High-voltage, High-power Active Devices App 20210296452 - Hanson; Allen W. ;   et al. | 2021-09-23 |
Device isolation design rules for HAST improvement Grant 11,018,220 - Hanson , et al. May 25, 2 | 2021-05-25 |
FET operational temperature determination by field plate resistance thermometry Grant 10,855,230 - Mahon , et al. December 1, 2 | 2020-12-01 |
FET operational temperature determination by gate structure resistance thermometry Grant 10,790,787 - Mahon , et al. September 29, 2 | 2020-09-29 |
Fet Operational Temperature Determination By Field Plate Resistance Thermometry App 20200144969 - Mahon; Simon John ;   et al. | 2020-05-07 |
Fet Operational Temperature Determination By Gate Structure Resistance Thermometry App 20200144970 - Mahon; Simon John ;   et al. | 2020-05-07 |
Barrier For Preventing Eutectic Break-through In Through-substrate Vias App 20190096743 - Hanson; Allen W. ;   et al. | 2019-03-28 |
Operational Temperature Determination In Bipolar Transistors By Resistance Thermometry App 20190078941 - Mahon; Simon John ;   et al. | 2019-03-14 |
Fet Operational Temperature Determination By Gate Structure Resistance Thermometry App 20190028065 - Mahon; Simon John ;   et al. | 2019-01-24 |
Fet Operational Temperature Determination By Field Plate Resistance Thermometry App 20190028066 - Mahon; Simon John ;   et al. | 2019-01-24 |
Barrier for preventing eutectic break-through in through-substrate vias Grant 10,147,642 - Hanson , et al. De | 2018-12-04 |
Device Isolation Design Rules For Hast Improvement App 20180308927 - Hanson; Allen W. ;   et al. | 2018-10-25 |
Methods of manufacturing gallium nitride devices Grant 9,978,858 - Johnson , et al. May 22, 2 | 2018-05-22 |
Iii-nitride Semiconductor Structures Comprising Spatially Patterned Implanted Species App 20180122928 - Roberts; John Claassen ;   et al. | 2018-05-03 |
Transistor with hole barrier layer Grant 9,876,082 - Hanson , et al. January 23, 2 | 2018-01-23 |
III-nitride semiconductor structures comprising spatially patterned implanted species Grant 9,773,898 - Roberts , et al. September 26, 2 | 2017-09-26 |
Methods of Manufacturing Gallium Nitride Devices App 20170154989 - Johnson; Jerry Wayne ;   et al. | 2017-06-01 |
Parasitic channel mitigation in III-nitride material semiconductor structures Grant 9,627,473 - Roberts , et al. April 18, 2 | 2017-04-18 |
Gallium nitride material devices and associated methods Grant 9,608,102 - Johnson , et al. March 28, 2 | 2017-03-28 |
Iii-nitride Semiconductor Structures Comprising Spatially Patterned Implanted Species App 20170069746 - Roberts; John Claassen ;   et al. | 2017-03-09 |
Parasitic Channel Mitigation In Iii-nitride Material Semiconductor Structures App 20170069713 - Roberts; John Claassen ;   et al. | 2017-03-09 |
Methods Of Spatially Implanting Species In Iii-nitride Semiconductor Structures App 20170069500 - Roberts; John Claassen ;   et al. | 2017-03-09 |
Transistor With Hole Barrier Layer App 20160322457 - Hanson; Allen W. ;   et al. | 2016-11-03 |
Gallium nitride devices Grant 9,318,417 - Therrien , et al. April 19, 2 | 2016-04-19 |
Gallium Nitride Devices App 20150137141 - Therrien; Robert Joseph ;   et al. | 2015-05-21 |
Gallium nitride devices Grant 8,946,765 - Therrien , et al. February 3, 2 | 2015-02-03 |
Gallium nitride devices with conductive regions Grant 8,859,400 - Therrien , et al. October 14, 2 | 2014-10-14 |
Gallium Nitride Devices App 20140203294 - Therrien; Robert Joseph ;   et al. | 2014-07-24 |
Gallium nitride devices with vias Grant 8,680,570 - Therrien , et al. March 25, 2 | 2014-03-25 |
Method For Forming Gallium Nitride Devices With Conductive Regions App 20130134437 - Therrien; Robert J. ;   et al. | 2013-05-30 |
Gallium Nitride Devices with Vias App 20130126895 - Therrien; Robert J. ;   et al. | 2013-05-23 |
Gallium nitride devices with electrically conductive regions Grant 8,350,288 - Therrien , et al. January 8, 2 | 2013-01-08 |
Method for forming gallium nitride devices with conductive regions Grant 8,343,856 - Therrien , et al. January 1, 2 | 2013-01-01 |
Field effect transistor with dual etch-stop layers for improved power, performance and reproducibility Grant 8,288,260 - Hanson October 16, 2 | 2012-10-16 |
In.sub.xGa.sub.1-xAs.sub.YP.sub.1-Y quaternary etch stop for improved chemical resistivity of gallium arsenide field effect transistors Grant 8,288,253 - Hanson , et al. October 16, 2 | 2012-10-16 |
Method for Forming Gallium Nitride Devices with Conductive Regions App 20120070967 - Therrien; Robert J. ;   et al. | 2012-03-22 |
Gallium Nitride Devices with Electrically Conductive Regions App 20120068190 - Therrien; Robert J. ;   et al. | 2012-03-22 |
Gallium nitride material devices including conductive regions Grant 8,067,786 - Therrien , et al. November 29, 2 | 2011-11-29 |
Gallium nitride material devices including diamond regions and methods associated with the same Grant 8,026,581 - Hanson , et al. September 27, 2 | 2011-09-27 |
Gallium nitride material transistors and methods associated with the same Grant 7,994,540 - Nagy , et al. August 9, 2 | 2011-08-09 |
Gallium Nitride Material Devices Including Conductive Regions And Methods Associated With The Same App 20100019248 - Therrien; Robert J. ;   et al. | 2010-01-28 |
Gallium Nitride Material Transistors And Methods Associated With The Same App 20100019850 - Nagy; Walter H. ;   et al. | 2010-01-28 |
Gallium Nitride Material Devices Including Diamond Regions And Methods Associated With The Same App 20090194773 - Hanson; Allen W. ;   et al. | 2009-08-06 |
Gallium nitride material transistors and methods associated with the same Grant 7,569,871 - Nagy , et al. August 4, 2 | 2009-08-04 |
Gallium nitride material devices including conductive regions and methods associated with the same Grant 7,566,913 - Therrien , et al. July 28, 2 | 2009-07-28 |
Gallium Nitride Material Transistors And Methods Associated With The Same App 20080246058 - Nagy; Walter H. ;   et al. | 2008-10-09 |
Gallium nitride material transistors and methods associated with the same Grant 7,352,016 - Nagy , et al. April 1, 2 | 2008-04-01 |
Gallium nitride material devices and associated methods App 20070272957 - Johnson; Jerry Wayne ;   et al. | 2007-11-29 |
Gallium nitride material devices including conductive regions and methods associated with the same App 20070200134 - Therrien; Robert J. ;   et al. | 2007-08-30 |
III-nitride material structures including silicon substrates Grant 7,247,889 - Hanson , et al. July 24, 2 | 2007-07-24 |
Gallium nitride material transistors and methods associated with the same App 20070120147 - Nagy; Walter H. ;   et al. | 2007-05-31 |
Gallium nitride material transistors and methods associated with the same Grant 7,135,720 - Nagy , et al. November 14, 2 | 2006-11-14 |
III-nitride material structures including silicon substrates App 20060118819 - Hanson; Allen W. ;   et al. | 2006-06-08 |
Gallium nitride material transistors and methods associated with the same App 20050167775 - Nagy, Walter H. ;   et al. | 2005-08-04 |
Gallium nitride material structures including isolation regions and methods App 20050145851 - Johnson, Jerry W. ;   et al. | 2005-07-07 |
Process for selective recess etching of epitaxial field effect transistors with a novel etch-stop layer Grant 6,060,402 - Hanson May 9, 2 | 2000-05-09 |