Han; Tae-Hyeon

Patent Applications and Registrations

Patent applications and USPTO patent grants for Han; Tae-Hyeon.The latest application filed is for "method of manufacturing bipolar device and structure thereof".

Company Profile

0.10.3

Han; Tae-Hyeon - Taejon KR
Han, Tae Hyeon - Daejeon Kwangyeok-shi KR
Han; Tae-Hyeon - Daejeon KR
Han; Tae Hyeon - Daejon-shi KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of manufacturing bipolar device and structure thereof Grant 6,552,374 - Han , et al. April 22, 2	2003-04-22
Method of manufacturing bipolar device and structure thereof App 20020094654 - Han, Tae-Hyeon ; et al.	2002-07-18
Method of manufacturing bipolar device and structure thereof App 20020079510 - Han, Tae-Hyeon ; et al.	2002-06-27
Bipolar junction device App 20020058388 - Ryum, Byung Ryul ; et al.	2002-05-16
Method for fabricating of super self-aligned bipolar transistor Grant 6,190,984 - Ryum , et al. February 20, 2	2001-02-20
Si/SiGe MOSFET and method for fabricating the same Grant 6,124,614 - Ryum , et al. September 26, 2	2000-09-26
Si/SiGe MOSFET and method for fabricating the same Grant 5,981,345 - Ryum , et al. November 9, 1	1999-11-09
Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor Grant 5,897,359 - Cho , et al. April 27, 1	1999-04-27
Method for fabricating heterojunction bipolar transistor Grant 5,798,277 - Ryum , et al. August 25, 1	1998-08-25
Method for fabricating semiconductor device isolation region using a trench mask Grant 5,696,020 - Ryum , et al. December 9, 1	1997-12-09
Silicon-silicon-germanium heterojunction bipolar transistor fabrication method Grant 5,668,022 - Cho , et al. September 16, 1	1997-09-16
Method for making bipolar transistor having an enhanced trench isolation Grant 5,496,745 - Ryum , et al. March 5, 1	1996-03-05
Method for fabricating bipolar transistor Grant 5,484,737 - Ryum , et al. January 16, 1	1996-01-16

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