Han; Joseph H.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Han; Joseph H..The latest application filed is for "using unstable nitrides to form semiconductor structures".

Company Profile

0.8.13

Han; Joseph H. - San Jose CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Using unstable nitrides to form semiconductor structures Grant 8,344,352 - Dominguez , et al. January 1, 2	2013-01-01
Tunable gate electrode work function material for transistor applications Grant 8,319,287 - Lavoie , et al. November 27, 2	2012-11-27
Using Unstable Nitrides To Form Semiconductor Structures App 20110272811 - Dominguez; Juan E. ; et al.	2011-11-10
Using unstable nitrides to form semiconductor structures Grant 7,982,204 - Dominguez , et al. July 19, 2	2011-07-19
Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill Grant 7,858,525 - Dominguez , et al. December 28, 2	2010-12-28
Using Unstable Nitrides to Form Semiconductor Structures App 20100230817 - Dominguez; Juan E. ; et al.	2010-09-16
Using unstable nitrides to form semiconductor structures Grant 7,749,906 - Dominguez , et al. July 6, 2	2010-07-06
Tunable Gate Electrode Work Function Material For Transistor Applications App 20100140717 - Lavoie; Adrien R. ; et al.	2010-06-10
Tunable gate electrode work function material for transistor applications Grant 7,682,891 - Lavoie , et al. March 23, 2	2010-03-23
Deposition process for iodine-doped ruthenium barrier layers Grant 7,476,615 - Han , et al. January 13, 2	2009-01-13
Novel Fluorine-Free Precursors and Methods for the Deposition of Conformal Conductive Films for Nanointerconnect Seed and Fill App 20080237861 - Dominguez; Juan E. ; et al.	2008-10-02
Continuous ultra-thin copper film formed using a low thermal budget App 20080182021 - Simka; Harsono S. ; et al.	2008-07-31
Tunable gate electrode work function material for transistor applications App 20080157212 - Lavoie; Adrien R. ; et al.	2008-07-03
Deposition process for iodine-doped ruthenium barrier layers App 20080102632 - Han; Joseph H. ; et al.	2008-05-01
Atomic layer deposition process for iridium barrier layers App 20080096381 - Han; Joseph H. ; et al.	2008-04-24
Catalytically enhanced atomic layer deposition process Grant 7,354,849 - Plombon , et al. April 8, 2	2008-04-08
Iridium encased metal interconnects for integrated circuit applications App 20080045013 - Lavoie; Adrien R. ; et al.	2008-02-21
Methods for forming thin copper films and structures formed thereby App 20070281476 - Lavoie; Adrien R. ; et al.	2007-12-06
Copper alloy layer for integrated circuit interconnects App 20070264816 - Lavoie; Adrien R. ; et al.	2007-11-15
Catalytically enhanced atomic layer deposition process App 20070202678 - Plombon; John J. ; et al.	2007-08-30
Using unstable nitrides to form semiconductor structures App 20070194287 - Dominguez; Juane E. ; et al.	2007-08-23

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