loadpatents
name:-0.016829013824463
name:-0.016104936599731
name:-0.0039548873901367
HALLIN; Christer Patent Filings

HALLIN; Christer

Patent Applications and Registrations

Patent applications and USPTO patent grants for HALLIN; Christer.The latest application filed is for "group iii-nitride high-electron mobility transistors with buried p-type layers and process for making the same".

Company Profile
3.18.13
  • HALLIN; Christer - Hillsborough NC
  • Hallin; Christer - Chapel Hill NC
  • Hallin; Christer - Linkoping N/A SE
  • Hallin; Christer - Herndon VA
  • Hallin; Christer - Linkjping SE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Group III-Nitride High-Electron Mobility Transistors with Buried P-Type Layers and Process for Making the Same
App 20210104623 - SRIRAM; Saptharishi ;   et al.
2021-04-08
Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
Grant 10,892,356 - Sriram , et al. January 12, 2
2021-01-12
Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
Grant 10,840,334 - Sriram , et al. November 17, 2
2020-11-17
Group III-Nitride High-Electron Mobility Transistors with Buried P-Type Layers and Process for Making the Same
App 20190237569 - Sriram; Saptharishi ;   et al.
2019-08-01
Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
Grant 10,192,980 - Sriram , et al. Ja
2019-01-29
Gallium Nitride High-Electron Mobility Transistors with Deep Implanted P-Type Layers in Silicon Carbide Substrates for Power Switching and Radio Frequency Applications and Process for Making the Same
App 20170373178 - Sriram; Saptharishi ;   et al.
2017-12-28
Predisposed high electron mobility transistor
Grant 9,608,085 - Hallin March 28, 2
2017-03-28
Mix doping of a semi-insulating Group III nitride
Grant 9,306,009 - Hallin , et al. April 5, 2
2016-04-05
Mix Doping Of A Semi-insulating Group Iii Nitride
App 20140239308 - Hallin; Christer ;   et al.
2014-08-28
Predisposed High Electron Mobility Transistor
App 20140091309 - Hallin; Christer
2014-04-03
Homoepitaxial growth of SiC on low off-axis SiC wafers
Grant 8,492,772 - Ellison , et al. July 23, 2
2013-07-23
Epitaxial semiconductor structures having reduced stacking fault nucleation sites
Grant 7,601,986 - Hallin , et al. October 13, 2
2009-10-13
Homoepitaxial Growth Of Sic On Low Off-axis Sic Wafers
App 20090230406 - Ellison; Alexandre ;   et al.
2009-09-17
Homoepitaxial growth of SiC on low off-axis SiC wafers
Grant 7,531,433 - Ellison , et al. May 12, 2
2009-05-12
Featuring forming methods to reduce stacking fault nucleation sites
Grant 7,396,410 - Hallin , et al. July 8, 2
2008-07-08
Sequential lithographic methods to reduce stacking fault nucleation sites
Grant 7,226,805 - Hallin , et al. June 5, 2
2007-06-05
Feature Forming Methods To Reduce Stacking Fault Nucleation Sites
App 20070101930 - Hallin; Christer ;   et al.
2007-05-10
Epitaxial Semiconductor Structures Having Reduced Stacking Fault Nucleation Sites
App 20070105349 - Hallin; Christer ;   et al.
2007-05-10
Lithographic methods to reduce stacking fault nucleation sites
Grant 7,173,285 - Hallin , et al. February 6, 2
2007-02-06
Sequential Lithographic Methods to Reduce Stacking Fault Nucleation Sites
App 20060243985 - Hallin; Christer ;   et al.
2006-11-02
Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
Grant 7,109,521 - Hallin , et al. September 19, 2
2006-09-19
Homoepitaxial growth of SiC on low off-axis SiC wafers
App 20060011128 - Ellison; Alexandre ;   et al.
2006-01-19
Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites
App 20050205871 - Hallin, Christer ;   et al.
2005-09-22
Sequential lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites
App 20050205872 - Hallin, Christer ;   et al.
2005-09-22
Method and a device for epitaxial growth of objects by chemical vapor deposition
Grant 6,093,253 - Lofgren , et al. July 25, 2
2000-07-25
Device for epitaxially growing objects and method for such a growth
Grant 6,039,812 - Ellison , et al. March 21, 2
2000-03-21
Device and a method for epitaxially growing objects by CVD
Grant 6,030,661 - Kordina , et al. February 29, 2
2000-02-29
Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
Grant 5,792,257 - Kordina , et al. August 11, 1
1998-08-11
Device and a method for epitaxially growing objects by CVD
Grant 5,704,985 - Kordina , et al. January 6, 1
1998-01-06

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