Haeusler; Alfred

Patent Applications and Registrations

Patent applications and USPTO patent grants for Haeusler; Alfred.The latest application filed is for "method for producing a ceramic component composed of a plurality of joined preforms and component obtained by the method".

Company Profile

0.20.23

Haeusler; Alfred - Meitingen DE
Haeusler; Alfred - Freising N/A DE
Haeusler; Alfred - US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for producing a ceramic component composed of a plurality of joined preforms and component obtained by the method Grant 10,696,600 - Polster , et al. June 30, 2	2020-06-30
Method For Producing A Ceramic Component Composed Of A Plurality Of Joined Preforms And Component Obtained By The Method App 20170226020 - POLSTER; PETER ; et al.	2017-08-10
Advanced CMOS using super steep retrograde wells Grant 8,703,568 - Babcock , et al. April 22, 2	2014-04-22
Method For Producing A Ceramic Component Composed Of A Plurality Of Joined Preforms And Component Obtained By The Method App 20140044979 - POLSTER; PETER ; et al.	2014-02-13
Fully embedded micromechanical device, system on chip and method for manufacturing the same Grant 8,648,432 - Haeusler February 11, 2	2014-02-11
Processes for producing a polymer-bonded fiber agglomerate and a fiber-reinforced composite material Grant 8,603,374 - Domagalski , et al. December 10, 2	2013-12-10
Semiconductor Device Including A Deep Contact And A Method Of Manufacturing Such A Device App 20130280906 - Haeusler; Alfred	2013-10-24
Semiconductor device including a deep contact and a method of manufacturing such a device Grant 8,470,679 - Haeusler June 25, 2	2013-06-25
Fully Embedded Micromechanical Device, System On Chip And Method For Manufacturing The Same App 20130134531 - HAEUSLER; Alfred	2013-05-30
Method For Producing A Component And Component Produced By The Method App 20130115390 - KIENZLE; ANDREAS ; et al.	2013-05-09
Method For Manufacturing An Electronic Device App 20120205775 - HAEUSLER; Alfred ; et al.	2012-08-16
Advanced Cmos Using Super Steep Retrograde Wells App 20120164802 - Babcock; Jeffrey A. ; et al.	2012-06-28
Advanced CMOS using super steep retrograde wells Grant 8,129,246 - Babcock , et al. March 6, 2	2012-03-06
Tuning of SOI substrate doping Grant 8,093,115 - Schwartz , et al. January 10, 2	2012-01-10
Processes For Producing A Polymer-bonded Fiber Agglomerate And A Fiber-reinforced Composite Material App 20110316179 - DOMAGALSKI; PETER ; et al.	2011-12-29
Advanced Cmos Using Super Steep Retrograde Wells App 20110111553 - Babcock; Jeffrey A. ; et al.	2011-05-12
Tuning Of Soi Substrate Doping App 20110070719 - SCHWARTZ; Wolfgang ; et al.	2011-03-24
Method of manufacturing an electronic device including a PNP bipolar transistor Grant 7,888,225 - Haeusler February 15, 2	2011-02-15
Advanced CMOS using super steep retrograde wells Grant 7,883,977 - Babcock , et al. February 8, 2	2011-02-08
Semiconductor Device Including a Deep Contact and a Method of Manufacturing Such a Device App 20100283119 - HAEUSLER; Alfred	2010-11-11
Dopant Profile Control for Ultrashallow Arsenic Dopant Profiles App 20100148308 - HAEUSLER; Alfred ; et al.	2010-06-17
Advanced CMOS using super steep retrograde wells Grant 7,655,523 - Babcock , et al. February 2, 2	2010-02-02
Method Of Manufacturing An Electronic Device Including A Pnp Bipolar Transistor App 20090212393 - Haeusler; Alfred	2009-08-27
Advanced Cmos Using Super Steep Retrograde Wells App 20090130805 - Babcock; Jeffrey A. ; et al.	2009-05-21
Advanced CMOS using super steep retrograde wells Grant 7,501,324 - Babcock , et al. March 10, 2	2009-03-10
Advanced CMOS Using Super Steep Retrograde Wells App 20080132012 - Babcock; Jeffrey A. ; et al.	2008-06-05
Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer Grant 7,217,322 - Babcock , et al. May 15, 2	2007-05-15
Advanced CMOS using super steep retrograde wells Grant 7,199,430 - Babcock , et al. April 3, 2	2007-04-03
Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistor Grant 7,118,981 - Haeusler , et al. October 10, 2	2006-10-10
Advanced CMOS using Super Steep Retrograde Wells App 20060197158 - Babcock; Jeffrey A. ; et al.	2006-09-07
Advanced CMOS using super steep retrograde wells App 20060175657 - Babcock; Jeffrey A. ; et al.	2006-08-10
Advanced CMOS using super steep retrograde wells Grant 7,064,399 - Babcock , et al. June 20, 2	2006-06-20
Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer App 20050098093 - Babcock, Jeffrey A. ; et al.	2005-05-12
Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistor App 20050001236 - Haeusler, Alfred ; et al.	2005-01-06
Method for manufacturing and structure of semiconductor device with shallow trench collector contact region App 20040209433 - Babcock, Jeffrey A. ; et al.	2004-10-21
Semiconductor device with a collector contact in a depressed well-region Grant 6,774,455 - Babcock , et al. August 10, 2	2004-08-10
Method for manufacturing and structure of semiconductor device with shallow trench collector contact region App 20030062589 - Babcock, Jeffrey A. ; et al.	2003-04-03
Advanced CMOS using super steep retrograde wells App 20020033511 - Babcock, Jeffrey A. ; et al.	2002-03-21

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