loadpatents
name:-0.0063469409942627
name:-0.010845184326172
name:-0.00049686431884766
Haddad; Nadim F. Patent Filings

Haddad; Nadim F.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Haddad; Nadim F..The latest application filed is for "method for implementing prompt dose mitigating capacitor".

Company Profile
0.8.5
  • Haddad; Nadim F. - Oakton VA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method for implementing prompt dose mitigating capacitor
Grant 9,027,226 - Polavarapu , et al. May 12, 2
2015-05-12
Method For Implementing Prompt Dose Mitigating Capacitor
App 20140290038 - POLAVARAPU; MURTY S. ;   et al.
2014-10-02
Single-event upset immune static random access memory cell circuit
Grant 8,036,023 - Lawrence , et al. October 11, 2
2011-10-11
Non-volatile single-event upset tolerant latch circuit
Grant 7,965,541 - Li , et al. June 21, 2
2011-06-21
Single-Event Upset Immune Static Random Access Memory Cell Circuit, System, And Method
App 20110026315 - Lawrence; Reed K. ;   et al.
2011-02-03
Single-event upset immune static random access memory cell circuit, system, and method
Grant 7,876,602 - Lawrence , et al. January 25, 2
2011-01-25
Non-Volatile Single-Event Upset Tolerant Latch Circuit
App 20100027321 - Li; Bin ;   et al.
2010-02-04
Single-event Upset Immune Static Random Access Memory Cell Circuit, System, And Method
App 20090034312 - Lawrence; Reed K. ;   et al.
2009-02-05
Method for connecting circuit elements within an integrated circuit for reducing single-event upsets
Grant 7,269,057 - Haddad , et al. September 11, 2
2007-09-11
Method for connecting circuit elements within an integrated circuit for reducing single-event upsets
App 20060245124 - Haddad; Nadim F. ;   et al.
2006-11-02
Method to prevent latch-up and improve breakdown volatge in SOI mosfets
Grant 5,527,724 - Brady , et al. June 18, 1
1996-06-18
Method to radiation harden the buried oxide in silicon-on-insulator structures
Grant 5,360,752 - Brady , et al. November 1, 1
1994-11-01
Method of forming a frontside contact to the silicon substrate of a SOI wafer
Grant 5,314,841 - Brady , et al. May 24, 1
1994-05-24

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