| Patent | Date |
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Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, And Method For Manufacturing Group Iii Nitride Semi
App 20200176305 - ISHIBASHI; Keiji ; et al. | 2020-06-04 |
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
Grant 10,600,676 - Ishibashi , et al. | 2020-03-24 |
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
Grant 10,186,451 - Hachigo , et al. Ja | 2019-01-22 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, And Method For Manufacturing Group Iii Nitride Semiconductor Device
App 20180166325 - ISHIBASHI; Keiji ; et al. | 2018-06-14 |
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
Grant 9,917,004 - Ishibashi , et al. March 13, 2 | 2018-03-13 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, And Method For Manufacturing Group Iii Nitride Semiconductor Device
App 20160190001 - HACHIGO; Akihiro ; et al. | 2016-06-30 |
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
Grant 9,312,165 - Hachigo , et al. April 12, 2 | 2016-04-12 |
Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
Grant 9,312,340 - Kiyama , et al. April 12, 2 | 2016-04-12 |
Composite substrate
Grant 9,252,207 - Maeda , et al. February 2, 2 | 2016-02-02 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, Laminated Group Iii Nitride Composite Substrate, And Group Iii Nitride Semiconductor Device And Method For Manufacturing The Same
App 20150349063 - KIYAMA; Makoto ; et al. | 2015-12-03 |
Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
Grant 9,136,337 - Ishibashi , et al. September 15, 2 | 2015-09-15 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, And Method For Manufacturing Group Iii Nitride Semiconductor Device
App 20150194442 - Ishibashi; Keiji ; et al. | 2015-07-09 |
Semiconductor device and method for manufacturing the same
Grant 8,884,306 - Kyono , et al. November 11, 2 | 2014-11-11 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, And Method For Manufacturing Group Iii Nitride Semiconductor Device
App 20140225229 - HACHIGO; Akihiro ; et al. | 2014-08-14 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, Laminated Group Iii Nitride Composite Substrate, And Group Iii Nitride Semiconductor Device And Method For Manufacturing The Same
App 20140103353 - ISHIBASHI; Keiji ; et al. | 2014-04-17 |
Composite Substrate
App 20140103358 - Maeda; Yoko ; et al. | 2014-04-17 |
Method of manufacturing composite substrate
Grant 8,664,085 - Maeda , et al. March 4, 2 | 2014-03-04 |
Protective-film-attached Composite Substrate And Method Of Manufacturing Semiconductor Device
App 20130168693 - Satoh; Issei ; et al. | 2013-07-04 |
Method of Manufacturing Composite Substrate
App 20130040437 - Maeda; Yoko ; et al. | 2013-02-14 |
Group Iii Nitride Composite Substrate
App 20130032928 - Satoh; Issei ; et al. | 2013-02-07 |
Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device
Grant 8,349,078 - Shiomi , et al. January 8, 2 | 2013-01-08 |
GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
Grant 8,283,694 - Ishibashi , et al. October 9, 2 | 2012-10-09 |
Gallium Nitride Substrate
App 20120208355 - HACHIGO; Akihiro | 2012-08-16 |
Semiconductor Device And Method For Manufacturing The Same
App 20120205661 - KYONO; Takashi ; et al. | 2012-08-16 |
Gallium nitride substrate
Grant 8,183,668 - Hachigo May 22, 2 | 2012-05-22 |
Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane
Grant 8,177,911 - Hachigo , et al. May 15, 2 | 2012-05-15 |
Power Device And Method For Manufacturing The Same
App 20120104556 - KIYAMA; Makoto ; et al. | 2012-05-03 |
Damage Evaluation Method Of Compound Semiconductor Member, Production Method Of Compound Semiconductor Member, Gallium Nitride Compound Semiconductor Member, And Gallium Nitride Compound Semiconductor Membrane
App 20120100643 - Hachigo; Akihiro ; et al. | 2012-04-26 |
Group Iii Nitride Substrate, Epitaxial Layer-provided Substrate, Methods Of Manufacturing The Same, And Method Of Manufacturing Semiconductor Device
App 20120094473 - ISHIBASHI; Keiji ; et al. | 2012-04-19 |
Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same
Grant 8,143,140 - Kasai , et al. March 27, 2 | 2012-03-27 |
Method of manufacturing group III nitride semiconductor layer bonded substrate
Grant 8,124,498 - Hachigo February 28, 2 | 2012-02-28 |
Production method of compound semiconductor member
Grant 8,115,927 - Hachigo , et al. February 14, 2 | 2012-02-14 |
Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
Grant 8,101,968 - Ishibashi , et al. January 24, 2 | 2012-01-24 |
GaN Substrate and Method of Its Manufacture, Method of Manufacturing GaN Layer-Bonded Substrate, and Method of Manufacturing Semiconductor Device
App 20110315997 - Hachigo; Akihiro | 2011-12-29 |
Light-Emitting Device Substrate
App 20110272734 - Hachigo; Akihiro ; et al. | 2011-11-10 |
Method Of Forming Nitride Semiconductor Epitaxial Layer And Method Of Manufacturing Nitride Semiconductor Device
App 20110223749 - SHIOMI; Hiromu ; et al. | 2011-09-15 |
III-V compound semiconductor substrate manufacturing method
Grant 7,960,284 - Hachigo , et al. June 14, 2 | 2011-06-14 |
Group Iii Nitride Substrate, Epitaxial Layer-provided Substrate, Methods Of Manufacturing The Same, And Method Of Manufacturing Semiconductor Device
App 20110133207 - Ishibashi; Keiji ; et al. | 2011-06-09 |
GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
App 20110133209 - ISHIBASHI; Keiji ; et al. | 2011-06-09 |
Method For Manufacturing Semiconductor Substrate, Method For Manufacturing Semiconductor Device, Semiconductor Substrate, And Semiconductor Device
App 20110121311 - SATO; Fumitaka ; et al. | 2011-05-26 |
Gallium Nitride Substrate
App 20110073871 - HACHIGO; Akihiro | 2011-03-31 |
Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
Grant 7,901,960 - Ishibashi , et al. March 8, 2 | 2011-03-08 |
Nitride-based Compound Semiconductor Device, Compound Semiconductor Device, And Method Of Producing The Devices
App 20110018105 - Hachigo; Akihiro ; et al. | 2011-01-27 |
SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
App 20100210089 - KASAI; Hitoshi ; et al. | 2010-08-19 |
Group Iii Nitride Substrate, Epitaxial Layer-provided Substrate, Methods Of Manufacturing The Same, And Method Of Manufacturing Semiconductor Device
App 20100187540 - Ishibashi; Keiji ; et al. | 2010-07-29 |
Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same
Grant 7,728,348 - Kasai , et al. June 1, 2 | 2010-06-01 |
Damage Evaluation Method Of Compound Semiconductor Member, Production Method Of Compound Semiconductor Member, Gallium Nitride Compound Semiconductor Member, And Gallium Nitride Compound Semiconductor Membrane
App 20100068834 - Hachigo; Akihiro ; et al. | 2010-03-18 |
Method Of Manufacturing Group Iii Nitride Semiconductor Layer Bonded Substrate
App 20100035406 - HACHIGO; Akihiro | 2010-02-11 |
Nitride-based Compound Semiconductor, Method Of Cleaning A Compound Semiconductor, Method Of Producing The Same, And Substrate
App 20090291567 - HACHIGO; AKIHIRO ; et al. | 2009-11-26 |
Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate
Grant 7,569,493 - Hachigo , et al. August 4, 2 | 2009-08-04 |
Gallium nitride substrate, and gallium-nitride-substrate testing and manufacturing methods
Grant 7,554,175 - Hachigo June 30, 2 | 2009-06-30 |
III-V Nitride Semiconductor Layer-Bonded Substrate and Semiconductor Device
App 20080296584 - Hachigo; Akihiro | 2008-12-04 |
III-V Compound Semiconductor Substrate Manufacturing Method
App 20080176400 - Hachigo; Akihiro ; et al. | 2008-07-24 |
Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same
App 20080169483 - Kasai; Hitoshi ; et al. | 2008-07-17 |
Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane
App 20080044338 - Hachigo; Akihiro ; et al. | 2008-02-21 |
Gallium Nitride Substrate, and Gallium-Nitride-Substrate Testing and Manufacturing Methods
App 20070228521 - Hachigo; Akihiro | 2007-10-04 |
Method of working nitride semiconductor crystal
App 20060292832 - Ishibashi; Keiji ; et al. | 2006-12-28 |
Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane
App 20060281201 - Hachigo; Akihiro ; et al. | 2006-12-14 |
Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane
App 20060272573 - Hachigo; Akihiro ; et al. | 2006-12-07 |
Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate
App 20060264011 - Hachigo; Akihiro ; et al. | 2006-11-23 |
Saw device
Grant 6,984,918 - Hachigo , et al. January 10, 2 | 2006-01-10 |
Surface acoustic wave element
Grant 6,713,941 - Itakura , et al. March 30, 2 | 2004-03-30 |
Surface acoustic wave device and substrate thereof
Grant 6,710,513 - Nakahata , et al. March 23, 2 | 2004-03-23 |
Surface acoustic wave device utilizing a ZnO layer and a diamond layer
Grant 6,642,813 - Itakura , et al. November 4, 2 | 2003-11-04 |
Surface acoustic wave device and substrate thereof
App 20030011280 - Nakahata, Hideaki ; et al. | 2003-01-16 |
Surface acoustic wave element
App 20030011281 - Itakura, Katsuhiro ; et al. | 2003-01-16 |
Surface Acoustic Wave Device
App 20020158549 - Itakura, Katsuhiro ; et al. | 2002-10-31 |
Surface acoustic wave device
Grant 6,469,416 - Itakura , et al. October 22, 2 | 2002-10-22 |
Diamond-LiTaO.sub.3 surface acoustic wave device
Grant 5,646,468 - Nakahata , et al. July 8, 1 | 1997-07-08 |
Polycrystalline diamond substrate and process for producing the same
Grant 5,501,909 - Higaki , et al. March 26, 1 | 1996-03-26 |
Surface acoustic wave device and method of manufacturing the same
Grant 5,426,340 - Higaki , et al. June 20, 1 | 1995-06-20 |
Method for producing a surface acoustic wave device
Grant 5,390,401 - Shikata , et al. February 21, 1 | 1995-02-21 |
Method of making a surface acoustic wave device
Grant 5,355,568 - Imai , et al. October 18, 1 | 1994-10-18 |
Surface acoustic wave element and method of manufacturing the same
Grant 5,343,107 - Shikata , et al. August 30, 1 | 1994-08-30 |
Surface acoustic wave device
Grant 5,235,236 - Nakahata , et al. August 10, 1 | 1993-08-10 |
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