Ha; Jung Min

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ha; Jung Min.The latest application filed is for "anti-ang2 antibody and use thereof".

Company Profile

0.10.9

Ha; Jung Min - Gyeonggi-do KR
Ha; Jung Min - Gwangju-si N/A KR
Ha; Jung-Min - Seoul KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Anti-VISTA antibody and use thereof Grant 11,407,833 - Lee , et al. August 9, 2	2022-08-09
Anti-ang2 Antibody And Use Thereof App 20220204603 - NAM; Ju Ryoung ; et al.	2022-06-30
Anti-vista Antibody And Use Thereof App 20200407449 - Lee; Youngae ; et al.	2020-12-31
Chemical vapor deposition apparatus Grant 8,398,769 - Park , et al. March 19, 2	2013-03-19
Chemical Vapor Deposition Apparatus App 20100307416 - PARK; Sang Ki ; et al.	2010-12-09
Method Of Manufacturing An Inspection Apparatus For Inspecting An Electronic Device App 20100242275 - Choi; Woo-Chang ; et al.	2010-09-30
Semiconductor memory device having capacitor and method of forming the same Grant 7,326,587 - Park , et al. February 5, 2	2008-02-05
Semiconductor memory device having capacitor and method of forming the same App 20050230732 - Park, Jung-Woo ; et al.	2005-10-20
Semiconductor memory device having capacitor and method of forming the same Grant 6,927,444 - Park , et al. August 9, 2	2005-08-09
Method of forming germanium doped polycrystalline silicon gate of MOS transistor and method of forming CMOS transistor device using the same Grant 6,596,605 - Ha , et al. July 22, 2	2003-07-22
Semiconductor memory device having capacitor and method of forming the same App 20030017667 - Park, Jung-Woo ; et al.	2003-01-23
Method of forming a semiconductor device using selective epitaxial growth App 20020146888 - Ryu, Jong-Ryol ; et al.	2002-10-10
Method of forming germanium doped polycrystalline silicon gate of MOS transistor and method of forming CMOS transistor device using the same App 20020072182 - Ha, Jung-Min ; et al.	2002-06-13
Selective epitaxial growth method in semiconductor device Grant 6,391,749 - Park , et al. May 21, 2	2002-05-21
Selective Epitaxial Growth Method In Semiconductor Device App 20020022347 - Park, Jung-Woo ; et al.	2002-02-21
Methods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layer Grant 6,087,257 - Park , et al. July 11, 2	2000-07-11
Method of manufacturing a wiring layer in semiconductor device Grant 6,051,492 - Park , et al. April 18, 2	2000-04-18
Method for manufacturing a capacitor in a semiconductor device using selective tungsten nitride thin film Grant 5,723,384 - Park , et al. March 3, 1	1998-03-03

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.