Ha; Hyoung-Chan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ha; Hyoung-Chan.The latest application filed is for "cobalt deposition on barrier surfaces".

Company Profile

0.13.16

Ha; Hyoung-Chan - San Jose CA US
Ha, Hyoung-Chan - Cupertino CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Methods for forming barrier/seed layers for copper interconnect structures Grant 9,926,639 - Kim , et al. March 27, 2	2018-03-27
Cobalt deposition on barrier surfaces Grant 9,209,074 - Lu , et al. December 8, 2	2015-12-08
Cobalt Deposition On Barrier Surfaces App 20150255333 - LU; Jiang ; et al.	2015-09-10
Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance Grant 9,129,945 - Lee , et al. September 8, 2	2015-09-08
Cobalt deposition on barrier surfaces Grant 9,051,641 - Lu , et al. June 9, 2	2015-06-09
Metal gate structures and methods for forming thereof Grant 8,637,390 - Ganguli , et al. January 28, 2	2014-01-28
Process for forming cobalt and cobalt silicide materials in tungsten contact applications Grant 8,563,424 - Ganguli , et al. October 22, 2	2013-10-22
Chemical Vapor Deposition (cvd) Of Ruthenium Films And Applications For Same App 20130146468 - KIM; HOON ; et al.	2013-06-13
Process For Forming Cobalt And Cobalt Silicide Materials In Tungsten Contact Applications App 20120214303 - GANGULI; SESHADRI ; et al.	2012-08-23
Method For Depositing An Amorphous Carbon Film With Improved Density And Step Coverage App 20120208373 - PADHI; DEENESH ; et al.	2012-08-16
Process for forming cobalt and cobalt silicide materials in tungsten contact applications Grant 8,187,970 - Ganguli , et al. May 29, 2	2012-05-29
Methods For Forming Barrier/seed Layers For Copper Interconnect Structures App 20120012465 - KIM; HOON ; et al.	2012-01-19
Chemical Vapor Deposition Of Ruthenium Films Containing Oxygen Or Carbon App 20110312148 - KIM; HOON ; et al.	2011-12-22
Metal Gate Structures And Methods For Forming Thereof App 20110298062 - GANGULI; SESHADRI ; et al.	2011-12-08
Formation Of Liner And Barrier For Tungsten As Gate Electrode And As Contact Plug To Reduce Resistance And Enhance Device Performance App 20110233778 - Lee; Sang-Hyeob ; et al.	2011-09-29
Method For Depositing An Amorphous Carbon Film With Improved Density And Step Coverage App 20110104400 - Padhi; Deenesh ; et al.	2011-05-05
Process For Forming Cobalt And Cobalt Silicide Materials In Tungsten Contact Applications App 20110086509 - GANGULI; SESHADRI ; et al.	2011-04-14
Method for depositing an amorphous carbon film with improved density and step coverage Grant 7,867,578 - Padhi , et al. January 11, 2	2011-01-11
Cobalt Deposition On Barrier Surfaces App 20090053426 - LU; JIANG ; et al.	2009-02-26
Process For Forming Cobalt And Cobalt Silicide Materials In Tungsten Contact Applications App 20090004850 - GANGULI; SESHADRI ; et al.	2009-01-01
Method For Depositing An Amorphous Carbon Film With Improved Density And Step Coverage App 20080153311 - Padhi; Deenesh ; et al.	2008-06-26
Method For Depositing an Amorphous Carbon Film with Improved Density and Step Coverage App 20080003824 - Padhi; Deenesh ; et al.	2008-01-03
Method of titanium and titanium nitride layer deposition App 20030072884 - Zhang, Tong ; et al.	2003-04-17

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.