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Adapting a vehicle control strategy based on historical data related to a geographical zone Grant 11,104,324 - Jobson , et al. August 31, 2 | 2021-08-31 |
Adapting A Vehicle Control Strategy Based On Historical Data Related To A Geographical Zone App 20200047742 - Jobson; Edward ;   et al. | 2020-02-13 |
Adapting a vehicle control strategy based on historical data related to a geographical zone Grant 10,486,682 - Jobson , et al. Nov | 2019-11-26 |
Adapting A Vehicle Control Strategy Based On Historical Data Related To A Geographical Zone App 20180170349 - JOBSON; Edward ;   et al. | 2018-06-21 |
System to quantify and visualize ventricular rotation pattern of the heart Grant 8,996,093 - Bjallmark , et al. March 31, 2 | 2015-03-31 |
Methods of contrast enhancement for images having blood vessel structures Grant 8,351,667 - Li , et al. January 8, 2 | 2013-01-08 |
System To Quantify And Visualize Ventricular Rotation Pattern Of The Heart App 20120302870 - BJALLMARK; Anna ;   et al. | 2012-11-29 |
Method of automated image color calibration Grant 8,027,533 - Li , et al. September 27, 2 | 2011-09-27 |
Methods for enhancing vascular patterns in cervical imagery App 20100040263 - Li; Wenjing ;   et al. | 2010-02-18 |
Method of automated image color calibration App 20080240558 - Li; Wenjing ;   et al. | 2008-10-02 |
Semiconductor Device And A Method For Production Thereof App 20020094667 - Bakowski, Mietek ;   et al. | 2002-07-18 |
Junction termination for SiC schottky diode App 20020017647 - Bakowski, Mietek ;   et al. | 2002-02-14 |
Bipolar transistor having a low doped drift layer of crystalline SiC Grant 6,313,488 - Bakowski , et al. November 6, 2 | 2001-11-06 |
Transistor of SIC Grant 6,201,280 - Bakowski , et al. March 13, 2 | 2001-03-13 |
Semiconductor device having high channel mobility and a high breakdown voltage for high power applications Grant 6,150,671 - Harris , et al. November 21, 2 | 2000-11-21 |
Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage Grant 6,091,108 - Harris , et al. July 18, 2 | 2000-07-18 |
Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge Grant 6,040,237 - Bakowski , et al. March 21, 2 | 2000-03-21 |
SiC semiconductor device comprising a pn junction with a voltage absorbing edge Grant 6,002,159 - Bakowski , et al. December 14, 1 | 1999-12-14 |
SiC Semiconductor device comprising a pn Junction with a voltage absorbing edge Grant 5,977,605 - Bakowsky , et al. November 2, 1 | 1999-11-02 |
SiC semiconductor device comprising a pn junction Grant 5,932,894 - Bakowski , et al. August 3, 1 | 1999-08-03 |
Field controlled semiconductor device of SiC and a method for production thereof Grant 5,923,051 - Harris , et al. July 13, 1 | 1999-07-13 |
Junction termination for SiC Schottky diode Grant 5,914,500 - Bakowski , et al. June 22, 1 | 1999-06-22 |
Bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC Grant 5,831,287 - Bakowski , et al. November 3, 1 | 1998-11-03 |
Depletion region stopper for PN junction in silicon carbide Grant 5,801,836 - Bakowski , et al. September 1, 1 | 1998-09-01 |
Field of the invention Grant 5,773,849 - Harris , et al. June 30, 1 | 1998-06-30 |