Guo; Baonian
Patent Applications and Registrations
Patent applications and USPTO patent grants for Guo; Baonian.The latest application filed is for "ion implantation to reduce nanosheet gate length variation".
- Guo; Baonian - Andover MA
| Patent | Date |
|---|---|
| Ion implantation to reduce nanosheet gate length variation Grant 11,430,877 - Gu , et al. August 30, 2 | 2022-08-30 |
| Ion Implantation To Reduce Nanosheet Gate Length Variation App 20220157968 - Gu; Sipeng ; et al. | 2022-05-19 |
| Uniform gate dielectric for DRAM device Grant 10,522,549 - Guo , et al. Dec | 2019-12-31 |
| Uniform Gate Dielectric For Dram Device App 20190259764 - Guo; Baonian ; et al. | 2019-08-22 |
| FinFET device fabrication using thermal implantation Grant 8,722,431 - Pradhan , et al. May 13, 2 | 2014-05-13 |
| Finfet Device Fabrication Using Thermal Implantation App 20130252349 - Pradhan; Nilay Anil ; et al. | 2013-09-26 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.
| 