Gunjishima; Itaru

Patent Applications and Registrations

Patent applications and USPTO patent grants for Gunjishima; Itaru.The latest application filed is for "sic single crystal seed, sic ingot, sic single crystal seed production method, and sic single crystal ingot production method".

Company Profile

0.15.12

Gunjishima; Itaru - Nagakute JP
GUNJISHIMA; Itaru - Nagakute-shi JP
Gunjishima; Itaru - Aichi-gun N/A JP
Gunjishima; Itaru - Nagoya JP
Gunjishima, Itaru - Nagoya-city JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
SiC single crystal seed, SiC ingot, SiC single crystal seed production method, and SiC single crystal ingot production method Grant 10,236,338 - Furuya , et al.	2019-03-19
SiC single crystal, SiC wafer, SiC substrate, and SiC device Grant 10,125,435 - Gunjishima , et al. November 13, 2	2018-11-13
Sic Single Crystal Seed, Sic Ingot, Sic Single Crystal Seed Production Method, And Sic Single Crystal Ingot Production Method App 20180130872 - FURUYA; Yuuki ; et al.	2018-05-10
Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal Grant 9,534,317 - Gunjishima , et al. January 3, 2	2017-01-03
Sic Single Crystal, Sic Wafer, Sic Substrate, And Sic Device App 20150308014 - GUNJISHIMA; Itaru ; et al.	2015-10-29
SiC single crystal, SiC wafer, and semiconductor device Grant 9,166,008 - Gunjishima , et al. October 20, 2	2015-10-20
Seed Crystal For Sic Single-crystal Growth, Sic Single Crystal, And Method Of Manufacturing The Sic Single Crystal App 20150275397 - Gunjishima; Itaru ; et al.	2015-10-01
Manufacturing method of silicon carbide single crystal Grant 9,145,622 - Urakami , et al. September 29, 2	2015-09-29
SiC single crystal, production method therefor, SiC wafer and semiconductor device Grant 9,096,947 - Gunjishima , et al. August 4, 2	2015-08-04
Manufacturing method of silicon carbide single crystal Grant 9,051,663 - Urakami , et al. June 9, 2	2015-06-09
SiC single crystal, SiC wafer, and semiconductor device Grant 9,048,102 - Gunjishima , et al. June 2, 2	2015-06-02
Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defects Grant 8,936,682 - Urakami , et al. January 20, 2	2015-01-20
Sic Single Crystal, Sic Wafer, And Semiconductor Device App 20140291700 - Gunjishima; Itaru ; et al.	2014-10-02
SiC SINGLE CRYSTAL, PRODUCTION METHOD THEREFOR, SiC WAFER AND SEMICONDUCTOR DEVICE App 20140091325 - Gunjishima; Itaru ; et al.	2014-04-03
Sic Single Crystal, Sic Wafer, And Semiconductor Device App 20140027787 - Gunjishima; Itaru ; et al.	2014-01-30
Manufacturing Method Of Silicon Carbide Single Crystal App 20120132132 - Urakami; Yasushi ; et al.	2012-05-31
Manufacturing Method Of Silicon Carbide Single Crystal App 20120073495 - URAKAMI; Yasushi ; et al.	2012-03-29
Manufacturing Method Of Silicon Carbide Single Crystal App 20120060751 - URAKAMI; Yasushi ; et al.	2012-03-15
Method for manufacturing silicon carbide single crystal from dislocation control seed crystal Grant 7,135,074 - Gunjishima , et al. November 14, 2	2006-11-14
Method For Manufacturing Silicon Carbide Single Crystal From Dislocation Control Seed Crystal App 20050211156 - Gunjishima, Itaru ; et al.	2005-09-29

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