Gunji-Yoneoka; Marika

Patent Applications and Registrations

Patent applications and USPTO patent grants for Gunji-Yoneoka; Marika.The latest application filed is for "three-dimensional memory device containing a vertical semiconductor channel containing a connection strap and method of making the same".

Company Profile

3.8.8

Gunji-Yoneoka; Marika - Sunnyvale CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Three-dimensional memory device containing a vertical semiconductor channel containing a connection strap and method of making the same Grant 10,991,718 - Pachamuthu , et al. April 27, 2	2021-04-27
Three-dimensional Memory Device Containing A Vertical Semiconductor Channel Containing A Connection Strap And Method Of Making The Same App 20210036003 - PACHAMUTHU; Jayavel ; et al.	2021-02-04
Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same Grant 10,777,570 - Nakamura , et al. Sept	2020-09-15
Three-dimensional memory device having epitaxial germanium-containing vertical channel and method of making thereof Grant 10,121,794 - Gunji-Yoneoka , et al. November 6, 2	2018-11-06
Multi-tier Three-dimensional Memory Devices Containing Annular Dielectric Spacers Within Memory Openings And Methods Of Making The Same App 20180277567 - Nakamura; Tadashi ; et al.	2018-09-27
Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same Grant 9,991,280 - Nakamura , et al. June 5, 2	2018-06-05
Three-dimensional Memory Device Having Epitaxial Germanium-containing Vertical Channel And Method Of Making Thereof App 20170365613 - GUNJI-YONEOKA; Marika ; et al.	2017-12-21
Method of selectively depositing floating gate material in a memory device Grant 9,768,270 - Gunji-Yoneoka , et al. September 19, 2	2017-09-19
Multi-tier Three-dimensional Memory Devices Containing Annular Dielectric Spacers Within Memory Openings And Methods Of Making The Same App 20170236835 - NAKAMURA; Tadashi ; et al.	2017-08-17
Air gap formation between bit lines with side protection Grant 9,337,085 - Sel , et al. May 10, 2	2016-05-10
Air gap formation between bit lines with top protection Grant 9,330,969 - Sel , et al. May 3, 2	2016-05-03
Method Of Selectively Depositing Floating Gate Material In A Memory Device App 20150380419 - GUNJI-YONEOKA; Marika ; et al.	2015-12-31
Full metal gate replacement process for NAND flash memory Grant 9,129,854 - Tokunaga , et al. September 8, 2	2015-09-08
Air Gap Formation Between Bit Lines with Side Protection App 20150228582 - Sel; Jong Sun ; et al.	2015-08-13
Air Gap Formation Between Bit Lines with Top Protection App 20150228532 - Sel; Jong Sun ; et al.	2015-08-13
Full Metal Gate Replacement Process for NAND Flash Memory App 20140097482 - Tokunaga; Kazuya ; et al.	2014-04-10

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