Gu; Xing

Patent Applications and Registrations

Patent applications and USPTO patent grants for Gu; Xing.The latest application filed is for "integration of self-biased magnetic circulators with microwave devices".

Company Profile

7.11.10

Gu; Xing - Allen TX
GU; Xing - Hubei CN
Gu; Xing - Plano TX
Gu; Xing - Redondo Beach CA US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Integration of self-biased magnetic circulators with microwave devices Grant 11,152,677 - Cui , et al. October 19, 2	2021-10-19
Passive magnetic devices Grant 10,854,810 - Ketterson , et al. December 1, 2	2020-12-01
Process of fabricating high efficiency, high linearity N-polar gallium-nitride (GaN) transistors Grant 10,749,009 - Gu , et al. A	2020-08-18
Integration Of Self-biased Magnetic Circulators With Microwave Devices App 20200153071 - Cui; Yongjie ; et al.	2020-05-14
Passive Magnetic Devices App 20200152859 - Ketterson; Andrew Arthur ; et al.	2020-05-14
Passive magnetic devices Grant 10,553,782 - Ketterson , et al. Fe	2020-02-04
Pan-tilt Quick Locking Device App 20200011473 - HUANG; Li ; et al.	2020-01-09
Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfaces Grant 10,177,247 - Xie , et al. J	2019-01-08
Semiconductor device with high thermal conductivity substrate and process for making the same Grant 10,090,172 - Gu , et al. October 2, 2	2018-10-02
Passive Magnetic Devices App 20180240963 - Ketterson; Andrew Arthur ; et al.	2018-08-23
Semiconductor device with high thermal conductivity substrate and process for making the same Grant 10,037,899 - Gu , et al. July 31, 2	2018-07-31
CONTINUOUS CRYSTALLINE GALLIUM NITRIDE (GaN) PN STRUCTURE WITH NO INTERNAL REGROWTH INTERFACES App 20180212045 - Xie; Jinqiao ; et al.	2018-07-26
Double heterojunction field effect transistor with polarization compensated layer Grant 9,972,708 - Xie , et al. May 15, 2	2018-05-15
Double Heterojunction Field Effect Transistor With Polarization Compensated Layer App 20170278958 - Xie; Jinqiao ; et al.	2017-09-28
Semiconductor Device With High Thermal Conductivity Substrate And Process For Making The Same App 20170133295 - Gu; Xing ; et al.	2017-05-11
Semiconductor Device With High Thermal Conductivity Substrate And Process For Making The Same App 20170133239 - Gu; Xing ; et al.	2017-05-11
Gallium nitride on high thermal conductivity material device and method Grant 9,337,278 - Gu , et al. May 10, 2	2016-05-10
AIN buffer N-polar GaN HEMT profile Grant 8,710,511 - Gambin , et al. April 29, 2	2014-04-29
AlN BUFFER N-POLAR GaN HEMT PROFILE App 20130026489 - Gambin; Vincent ; et al.	2013-01-31

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