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Patent applications and USPTO patent grants for Grula; Gregory J..The latest application filed is for "transistor fabrication process in which a contact metallization is formed with different silicide thickness over gate interconnect material and transistor source/drain regions".
Patent | Date |
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Transistor fabrication process in which a contact metallization is formed with different silicide thickness over gate interconnect material and transistor source/drain regions Grant 6,060,387 - Shepela , et al. May 9, 2 | 2000-05-09 |
Method of forming trench isolated regions with sidewall doping Grant 5,296,392 - Grula , et al. March 22, 1 | 1994-03-22 |
Planarization process for trench isolation in integrated circuit manufacture Grant 5,175,122 - Wang , et al. December 29, 1 | 1992-12-29 |
Planarization process utilizing three resist layers Grant 5,077,234 - Scoopo , et al. December 31, 1 | 1991-12-31 |
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