Groschopf; Johannes

Patent Applications and Registrations

Patent applications and USPTO patent grants for Groschopf; Johannes.The latest application filed is for "technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers".

Company Profile

1.15.17

Groschopf; Johannes - Radebeul N/A DE
Groschopf; Johannes - Roederland DE
Groschopf; Johannes - Wainsdorf DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Self-aligned multiple gate transistor formed on a bulk substrate Grant 8,679,924 - Wei , et al. March 25, 2	2014-03-25
Planarization of a material system in a semiconductor device by using a non-selective in situ prepared slurry Grant 8,585,465 - Groschopf , et al. November 19, 2	2013-11-19
Electrochemical planarization system comprising enhanced electrolyte flow Grant 8,506,770 - Kiesel , et al. August 13, 2	2013-08-13
Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers Grant 8,357,575 - Hempel , et al. January 22, 2	2013-01-22
Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistors Grant 8,338,306 - Heinrich , et al. December 25, 2	2012-12-25
Technique For Exposing A Placeholder Material In A Replacement Gate Approach By Modifying A Removal Rate Of Stressed Dielectric Overlayers App 20120282764 - Hempel; Klaus ; et al.	2012-11-08
Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers Grant 8,247,281 - Hempel , et al. August 21, 2	2012-08-21
Self-Aligned Multiple Gate Transistor Formed on a Bulk Substrate App 20110291196 - Wei; Andy ; et al.	2011-12-01
Planarization of a Material System in a Semiconductor Device by Using a Non-Selective In Situ Prepared Slurry App 20110269381 - Groschopf; Johannes ; et al.	2011-11-03
Method of forming CMOS device having gate insulation layers of different type and thickness Grant 8,021,942 - Wei , et al. September 20, 2	2011-09-20
Forming Semiconductor Resistors In A Semiconductor Device Comprising Metal Gates By Increasing Etch Resistivity Of The Resistors App 20110073956 - Heinrich; Jens ; et al.	2011-03-31
Technique For Exposing A Placeholder Material In A Replacement Gate Approach By Modifying A Removal Rate Of Stressed Dielectric Overlayers App 20100330790 - Hempel; Klaus ; et al.	2010-12-30
Method for forming offset spacers for semiconductor device arrangements Grant 7,767,508 - Fisher , et al. August 3, 2	2010-08-03
Electrochemical Planarization System Comprising Enhanced Electrolyte Flow App 20100163426 - Kiesel; Axel ; et al.	2010-07-01
Method for reducing polish-induced damage in a contact structure by forming a capping layer Grant 7,528,059 - Frohberg , et al. May 5, 2	2009-05-05
Cmos Device Having Gate Insulation Layers Of Different Type And Thickness And A Method Of Forming The Same App 20090057769 - Wei; Andy ; et al.	2009-03-05
Method of using an aqueous solution and composition thereof Grant 7,387,970 - Cooper , et al. June 17, 2	2008-06-17
Method for forming offset spacers for semiconductor device arrangements App 20080090368 - Fisher; Philip A. ; et al.	2008-04-17
Trench replacement gate process for transistors having elevated source and drain regions App 20080070356 - Brown; Laura A. ; et al.	2008-03-20
Method For Reducing Polish-induced Damage In A Contact Structure By Forming A Capping Layer App 20070232063 - Frohberg; Kai ; et al.	2007-10-04
Retaining Ring Structure For Enhanced Removal Rate During Fixed Abrasive Chemical Mechanical Polishing App 20070049184 - Venigalla; Rajasekhar ; et al.	2007-03-01
Polishing technique to minimize abrasive removal of material and composition therefor App 20060223320 - Cooper; Kevin E. ; et al.	2006-10-05
Method of using an aqueous solution and composition thereof App 20040224426 - Cooper, Kevin E. ; et al.	2004-11-11
Method of forming a substrate contact in a field effect transistor formed over a buried insulator layer Grant 6,720,242 - Burbach , et al. April 13, 2	2004-04-13
Apparatus and method for reducing oxidation of polished metal surfaces in a chemical mechanical polishing process App 20040009670 - Preusse, Axel ; et al.	2004-01-15
System and method for reducing the chemical reactivity of water and other chemicals used in the fabrication of integrated circuits App 20040000234 - Preusse, Axel ; et al.	2004-01-01
Diffusion barrier layer in semiconductor substrates to reduce copper contamination from the back side App 20030232466 - Zistl, Christian ; et al.	2003-12-18
Method of forming a substrate contact in a field effect transistor formed over a buried insulator layer App 20020055244 - Burbach, Gert ; et al.	2002-05-09

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