GREAT POWER SEMICONDUCTOR CORP.

Patent Applications and Registrations

Patent applications and USPTO patent grants for GREAT POWER SEMICONDUCTOR CORP..The latest application filed is for "trenched power mosfet with enhanced breakdown voltage and fabrication method thereof".

Company Profile

0.18.19

GREAT POWER SEMICONDUCTOR CORP. - New Taipei N/A TW
GREAT POWER SEMICONDUCTOR CORP. - NEW TAIPEI CITY TW
Great Power Semiconductor Corp. - Taipei County TW
GREAT POWER SEMICONDUCTOR CORP. - Xizhi City TW
Great Power Semiconductor Corp. - Xizhi TW
Great Power Semiconductor Corp. - Taipei TW
GREAT POWER SEMICONDUCTOR CORP. -

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Trenched power MOSFET with enhanced breakdown voltage and fabrication method thereof Grant 9,214,531 - Yeh December 15, 2	2015-12-15
Trenched power MOSFET with enhanced breakdown voltage and fabrication method thereof Grant 8,975,691 - Yeh March 10, 2	2015-03-10
Trench power MOSFET structure with high cell density and fabrication method thereof Grant 8,900,950 - Hsu December 2, 2	2014-12-02
Trench power MOSFET and fabrication method thereof Grant 8,872,265 - Yeh , et al. October 28, 2	2014-10-28
Fabrication method of trenched power semiconductor device with source trench Grant 8,846,469 - Yeh , et al. September 30, 2	2014-09-30
Trenched power semiconductor device and fabrication method thereof Grant 8,735,249 - Tsai , et al. May 27, 2	2014-05-27
Trenched Power Mosfet With Enhanced Breakdown Voltage And Fabrication Method Thereof App 20140120670 - YEH; CHUN-YING	2014-05-01
Trenched Power Mosfet With Enhanced Breakdown Voltage And Fabrication Method Thereof App 20140042534 - YEH; Chun-Ying	2014-02-13
Trench Power Mosfet And Fabrication Method Thereof App 20130292761 - YEH; CHUN YING ; et al.	2013-11-07
Method to fabricate a closed cell trench power MOSFET structure Grant 8,569,134 - Hsu October 29, 2	2013-10-29
Power semiconductor structure with schottky diode Grant 8,525,256 - Hsu , et al. September 3, 2	2013-09-03
Power semiconductor device with trench bottom polysilicon and fabrication method thereof Grant 8,445,958 - Tu May 21, 2	2013-05-21
Trench power MOSFET structure with high switching speed and fabrication method thereof Grant 8,421,149 - Chang , et al. April 16, 2	2013-04-16
Power semiconductor structure with field effect rectifier and fabrication method thereof Grant 8,357,952 - Tu January 22, 2	2013-01-22
Fabrication method of a power semicondutor structure with schottky diode Grant 8,354,315 - Hsu , et al. January 15, 2	2013-01-15
Fabrication Method Of Trenched Power Semiconductor Device With Source Trench App 20120322217 - YEH; CHUN YING ; et al.	2012-12-20
Trenched Power Semiconductor Structure With Reduced Gate Impedance And Fabrication Method Thereof App 20120309177 - Hsu; Hsiu Wen	2012-12-06
Trenched Power Semiconductor Device And Fabrication Method Thereof App 20120299091 - TSAI; YI-YUN ; et al.	2012-11-29
Trench Power Mosfet Structure With High Switching Speed And Fabrication Method Thereof App 20120299109 - CHANG; YUAN-SHUN ; et al.	2012-11-29
Closed Cell Trench Power Mosfet Structure And Method To Fabricate The Same App 20120295411 - HSU; HSIU WEN	2012-11-22
Closed cell trench power MOSFET structure Grant 8,304,828 - Hsu November 6, 2	2012-11-06
Power Semiconductor Structure With Schottky Diode And Fabrication Method Thereof App 20120267713 - HSU; HSIU WEN ; et al.	2012-10-25
Trench Power Mosfet Structure With High Cell Density And Fabrication Method Thereof App 20120256258 - HSU; HSIU-WEN	2012-10-11
Fabrication method of power semiconductor structure with reduced gate impedance Grant 8,153,490 - Hsu April 10, 2	2012-04-10
Fabrication Method Of Integrating Power Transistor And Schottky Diode On A Monolithic Substrate App 20120040503 - TU; KAO-WAY	2012-02-16
Power Semiconductor Structure With Schottky Diode And Fabrication Method Thereof App 20110316077 - HSU; HSIU WEN ; et al.	2011-12-29
Fabrication method of power semiconductor structure with low gate charge Grant 8,080,457 - Hsu December 20, 2	2011-12-20
Fabrication Method Of Self-aligned Trenched Power Semiconductor Structure App 20110306194 - YEH; Chun Ying	2011-12-15
Power Semiconductor Device With Trench Bottom Polysilicon And Fabrication Method Thereof App 20110298042 - TU; KAO-WAY	2011-12-08
Power Semiconductor Structure With Field Effect Rectifier And Fabrication Method Thereof App 20110278642 - TU; KAO-WAY	2011-11-17
Closed Cell Trench Power Mosfet Structure And Method To Fabricate The Same App 20110227149 - HSU; HSIU WEN	2011-09-22
High Cell Density Trenched Power Semiconductor Structure And Fabrication Method Thereof App 20110215397 - HSU; HSIU WEN	2011-09-08
Trenched power semiconductor structure with schottky diode and fabrication method thereof Grant 7,994,001 - Hsu , et al. August 9, 2	2011-08-09

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.