Grabowski; Wayne B.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Grabowski; Wayne B..The latest application filed is for "laterally-graded doping of materials".

Company Profile

0.16.11

Grabowski; Wayne B. - Los Altos CA
Grabowski; Wayne B. - Mountain View CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Laterally-graded doping of materials Grant 9,768,274 - Grabowski , et al. September 19, 2	2017-09-19
Deposit/etch for tapered oxide Grant 9,472,630 - Parthasarathy , et al. October 18, 2	2016-10-18
Laterally-graded Doping Of Materials App 20160149018 - Grabowski; Wayne B. ; et al.	2016-05-26
Deposit/etch For Tapered Oxide App 20140187019 - PARTHASARATHY; Vijay ; et al.	2014-07-03
Deposit/etch for tapered oxide Grant 8,765,609 - Parthasarathy , et al. July 1, 2	2014-07-01
Forming A Tapered Oxide From A Thick Oxide Layer App 20140045318 - PARTHASARATHY; Vijay ; et al.	2014-02-13
Deposit/etch For Tapered Oxide App 20140030868 - Parthasarathy; Vijay ; et al.	2014-01-30
Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same Grant 7,282,412 - Williams , et al. October 16, 2	2007-10-16
Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same Grant 7,276,411 - Williams , et al. October 2, 2	2007-10-02
Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same Grant 7,238,568 - Williams , et al. July 3, 2	2007-07-03
Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same App 20050215012 - Williams, Richard K. ; et al.	2005-09-29
Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same App 20050215027 - Williams, Richard K. ; et al.	2005-09-29
Trench semiconductor device having gate oxide layer with mulitiple thicknesses and processes of fabricating the same App 20050215013 - Williams, Richard K. ; et al.	2005-09-29
Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same Grant 6,900,100 - Williams , et al. May 31, 2	2005-05-31
Trench semiconductor device having gate oxide layer with mulitiple thicknesses and processes of fabricating the same App 20040203200 - Williams, Richard K. ; et al.	2004-10-14
Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same App 20010026961 - Williams, Richard K. ; et al.	2001-10-04
Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses Grant 6,291,298 - Williams , et al. September 18, 2	2001-09-18
Method of forming vertical planar DMOSFET with self-aligned contact Grant 6,277,695 - Williams , et al. August 21, 2	2001-08-21
Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact Grant 6,268,242 - Williams , et al. July 31, 2	2001-07-31
Trench-gated power MOSFET with protective diode Grant 6,140,678 - Grabowski , et al. October 31, 2	2000-10-31
Trench-gated Schottky diode with integral clamping diode Grant 6,078,090 - Williams , et al. June 20, 2	2000-06-20
Method of making high voltage transistor Grant 5,411,901 - Grabowski , et al. May 2, 1	1995-05-02
Bi-directional MOSFET switch Grant 5,323,044 - Rumennik , et al. June 21, 1	1994-06-21
High voltage transistor Grant 5,274,259 - Grabowski , et al. December 28, 1	1993-12-28

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