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name:-0.022516965866089
name:-0.028185129165649
name:-0.0039918422698975
Gopinath; Sanjay Patent Filings

Gopinath; Sanjay

Patent Applications and Registrations

Patent applications and USPTO patent grants for Gopinath; Sanjay.The latest application filed is for "metal deposition".

Company Profile
3.26.19
  • Gopinath; Sanjay - Fremont CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Metal Deposition
App 20220290300 - Vellanki; Ravi ;   et al.
2022-09-15
Method For Preventing Line Bending During Metal Fill Process
App 20220262640 - Jandl; Adam ;   et al.
2022-08-18
Nucleation-free Tungsten Deposition
App 20220254685 - ERMEZ; Sema ;   et al.
2022-08-11
Rapid Flush Purging During Atomic Layer Deposition
App 20220186370 - Nannapaneni; Pragna ;   et al.
2022-06-16
Method for preventing line bending during metal fill process
Grant 11,355,345 - Jandl , et al. June 7, 2
2022-06-07
Metal fill process for three-dimensional vertical NAND wordline
Grant 11,348,795 - Schloss , et al. May 31, 2
2022-05-31
Multi-layer Feature Fill
App 20210313183 - Ba; Xiaolan ;   et al.
2021-10-07
Metal Fill Process For Three-dimensional Vertical Nand Wordline
App 20200211853 - Schloss; Lawrence ;   et al.
2020-07-02
Method For Preventing Line Bending During Metal Fill Process
App 20200144066 - Jandl; Adam ;   et al.
2020-05-07
Method for preventing line bending during metal fill process
Grant 10,573,522 - Jandl , et al. Feb
2020-02-25
Method For Preventing Line Bending During Metal Fill Process
App 20180053660 - Jandl; Adam ;   et al.
2018-02-22
Multilayer Film Including A Tantalum And Titanium Alloy As A Scalable Barrier Diffusion Layer For Copper Interconnects
App 20170170114 - Besser; Paul Raymond ;   et al.
2017-06-15
Contact integration for reduced interface and series contact resistance
Grant 9,484,251 - Besser , et al. November 1, 2
2016-11-01
Method to tune TiO.sub.x stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiO.sub.x/Ti based MIS contact scheme for CMOS
Grant 9,478,411 - Thombare , et al. October 25, 2
2016-10-25
Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
Grant 9,478,438 - Thombare , et al. October 25, 2
2016-10-25
Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery
Grant 9,447,499 - Roy , et al. September 20, 2
2016-09-20
Method for void-free cobalt gap fill
Grant 9,349,637 - Na , et al. May 24, 2
2016-05-24
Method And Apparatus To Deposit Pure Titanium Thin Film At Low Temperature Using Titanium Tetraiodide Precursor
App 20160056053 - Thombare; Shruti Vivek ;   et al.
2016-02-25
Method To Tune Tiox Stoichiometry Using Atomic Layer Deposited Ti Film To Minimize Contact Resistance For Tiox/ti Based Mis Contact Scheme For Cmos
App 20160056037 - Thombare; Shruti Vivek ;   et al.
2016-02-25
Method For Void-free Cobalt Gap Fill
App 20160056074 - Na; Jeong-Seok ;   et al.
2016-02-25
Systems and methods for remote plasma atomic layer deposition
Grant 9,255,326 - Na , et al. February 9, 2
2016-02-09
Conformal films on semiconductor substrates
Grant 9,117,884 - Shaviv , et al. August 25, 2
2015-08-25
Systems And Methods For Remote Plasma Atomic Layer Deposition
App 20140272185 - Na; Jeong-Seok ;   et al.
2014-09-18
Dual Plenum, Axi-symmetric Showerhead With Edge-to-center Gas Delivery
App 20130341433 - Roy; Shambhu N. ;   et al.
2013-12-26
Conformal films on semiconductor substrates
Grant 8,298,933 - Shaviv , et al. October 30, 2
2012-10-30
Conformal Films on Semiconductor Substrates
App 20100009533 - Shaviv; Roey ;   et al.
2010-01-14
Apparatus and methods for processing semiconductor substrates using supercritical fluids
Grant 7,503,334 - Shrinivasan , et al. March 17, 2
2009-03-17
Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
Grant 7,456,101 - Gopinath , et al. November 25, 2
2008-11-25
Use of metallocenes to inhibit copper oxidation during semiconductor processing
Grant 7,279,417 - Dalton , et al. October 9, 2
2007-10-09
Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
Grant 7,211,509 - Gopinath , et al. May 1, 2
2007-05-01
Surface treatment using iodine plasma to improve metal deposition
Grant 7,041,596 - Dalton , et al. May 9, 2
2006-05-09
Atomic layer deposition for fabricating thin films
Grant 7,037,574 - Paranjpe , et al. May 2, 2
2006-05-02
Method and apparatus for introduction of solid precursors and reactants into a supercritical fluid reactor
Grant 6,951,765 - Gopinath , et al. October 4, 2
2005-10-04
Apparatus and methods for processing semiconductor substrates using supercritical fluids
Grant 6,848,458 - Shrinivasan , et al. February 1, 2
2005-02-01
Microelectronic interconnect material with adhesion promotion layer and fabrication method
Grant 6,645,847 - Paranjpe , et al. November 11, 2
2003-11-11
Microelectronic interconnect material with adhesion promotion layer and fabrication method
Grant 6,627,995 - Paranjpe , et al. September 30, 2
2003-09-30
Apparatus for maintaining wafer back side and edge exclusion during supercritical fluid processing
Grant 6,550,484 - Gopinath , et al. April 22, 2
2003-04-22
Atomic layer deposition for fabricating thin films
App 20030003635 - Paranjpe, Ajit P. ;   et al.
2003-01-02
Microelectronic interconnect material with adhesion promotion layer and fabrication method
App 20020137332 - Paranjpe, Ajit P. ;   et al.
2002-09-26
Method of chemical-vapor deposition of a material
Grant 6,444,263 - Paranjpe , et al. September 3, 2
2002-09-03
Microelectronic interconnect material with adhesion promotion layer and fabrication method
App 20020102838 - Paranjpe, Ajit P. ;   et al.
2002-08-01
Microelectronic interconnect material with adhesion promotion layer and fabrication method
Grant 6,365,502 - Paranjpe , et al. April 2, 2
2002-04-02

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