Goodman; Alvin M.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Goodman; Alvin M..The latest application filed is for "trenched bipolar transistor structures".

Company Profile

0.15.0

Goodman; Alvin M. - Arlington VA
Goodman; Alvin M. - Princeton NJ
Goodman; Alvin M. - Prineton NJ
Goodman; Alvin M. - Princeton Township Mercer County

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Trenched bipolar transistor structures Grant 5,311,055 - Goodman , et al. May 10, 1	1994-05-10
Structure for a complementary-symmetry COMFET pair Grant 4,998,156 - Goodman , et al. March 5, 1	1991-03-05
Vertical MOSFET with reduced bipolar effects Grant 4,837,606 - Goodman , et al. June 6, 1	1989-06-06
Semiconductor device and method of making the same Grant 4,766,482 - Smeltzer , et al. August 23, 1	1988-08-23
Method using surface photovoltage (SPV) measurements for revealing heavy metal contamination of semiconductor material Grant 4,598,249 - Goodman , et al. July 1, 1	1986-07-01
Method for making vertical MOSFET with reduced bipolar effects Grant 4,587,713 - Goodman , et al. May 13, 1	1986-05-13
Method for revealing semiconductor surface damage using surface photovoltage (SPV) measurements Grant 4,567,431 - Goodman January 28, 1	1986-01-28
Power switching circuitry Grant 4,551,643 - Russell , et al. November 5, 1	1985-11-05
SIPOS Deposition method Grant 4,489,103 - Goodman , et al. December 18, 1	1984-12-18
Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode Grant 4,455,565 - Goodman , et al. June 19, 1	1984-06-19
Method of making CCD imagers Grant 4,396,438 - Goodman August 2, 1	1983-08-02
Self aligned aluminum polycrystalline silicon contact Grant 4,380,773 - Goodman April 19, 1	1983-04-19
Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer Grant 4,344,985 - Goodman , et al. August 17, 1	1982-08-17
Insulated gate field effect silicon-on-sapphire transistor and method of making same Grant 4,199,773 - Goodman , et al. April 22, 1	1980-04-22
MIS readout device with dielectric storage medium Grant 4,106,107 - Goodman August 8, 1	1978-08-08

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