| Patent | Date |
|---|
Low-voltage flash memory integrated with a vertical field effect transistor
Grant 11,456,308 - Hekmatshoartabari , et al. September 27, 2 | 2022-09-27 |
Memory Erasure Using Proximity Heaters
App 20220284958 - Cohen; Guy M. ; et al. | 2022-09-08 |
Memory erasure using proximity heaters
Grant 11,437,102 - Cohen , et al. September 6, 2 | 2022-09-06 |
Multi-level ferroelectric field-effect transistor devices
Grant 11,430,510 - Gong , et al. August 30, 2 | 2022-08-30 |
USING FERROELECTRIC FIELD-EFFECT TRANSISTORS (FeFETs) AS CAPACITIVE PROCESSING UNITS FOR IN-MEMORY COMPUTING
App 20220208259 - Gong; Nanbo ; et al. | 2022-06-30 |
Transfer Length Phase Change Material (pcm) Based Bridge Cell
App 20220199899 - Cohen; Guy M. ; et al. | 2022-06-23 |
In-memory Resistive Random Access Memory Xor Logic Using Complimentary Switching
App 20220190239 - Ando; Takashi ; et al. | 2022-06-16 |
Multi-level Ferroelectric Field-effect Transistor Devices
App 20220189546 - Gong; Nanbo ; et al. | 2022-06-16 |
Non-volatile Analog Resistive Memory Cells Implementing Ferroelectric Select Transistors
App 20220189526 - Gong; Nanbo ; et al. | 2022-06-16 |
Phase Change Memory Cell With Ovonic Threshold Switch
App 20220190238 - Gong; Nanbo ; et al. | 2022-06-16 |
FeFET UNIT CELLS FOR NEUROMORPHIC COMPUTING
App 20220180156 - Gong; Nanbo ; et al. | 2022-06-09 |
Phase-change Material-based Xor Logic Gates
App 20220173309 - Gong; Nanbo ; et al. | 2022-06-02 |
Semiconductor logic circuits including a non-volatile memory cell
Grant 11,322,202 - Gong , et al. May 3, 2 | 2022-05-03 |
Ferroelectric field effect transistor with nanowire core
Grant 11,302,810 - Gong , et al. April 12, 2 | 2022-04-12 |
Low-voltage Flash Memory Integrated With A Vertical Field Effect Transistor
App 20220108997 - Hekmatshoartabari; Bahman ; et al. | 2022-04-07 |
Non-volatile analog resistive memory cells implementing ferroelectric select transistors
Grant 11,232,824 - Gong , et al. January 25, 2 | 2022-01-25 |
Multi-level Cell Threshold Voltage Operation Of One-selector-one-resistor Structure Included In A Crossbar Array
App 20210375360 - Gong; Nanbo ; et al. | 2021-12-02 |
Phase Change Memory With Conductive Bridge Filament
App 20210367148 - Gong; Nanbo ; et al. | 2021-11-25 |
Semiconductor device including physical unclonable function
Grant 11,177,225 - Hekmatshoartabari , et al. November 16, 2 | 2021-11-16 |
Phase change memory with conductive bridge filament
Grant 11,145,814 - Gong , et al. October 12, 2 | 2021-10-12 |
Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array
Grant 11,139,025 - Gong , et al. October 5, 2 | 2021-10-05 |
Temperature Assisted Programming Of Flash Memory For Neuromorphic Computing
App 20210249081 - Gong; Nanbo ; et al. | 2021-08-12 |
Semiconductor Device Including Physical Unclonable Function
App 20210242142 - Hekmatshoartabari; Bahman ; et al. | 2021-08-05 |
Multi-level Cell Threshold Voltage Operation Of One-selector-one-resistor Structure Included In A Crossbar Array
App 20210225441 - Gong; Nanbo ; et al. | 2021-07-22 |
Pcm Cell With Resistance Drift Correction
App 20210210683 - Wu; Heng ; et al. | 2021-07-08 |
Memory device having separate programming and resistance readout control
Grant 11,004,511 - Cohen , et al. May 11, 2 | 2021-05-11 |
Phase Change Memory With Conductive Bridge Filament
App 20210050518 - Gong; Nanbo ; et al. | 2021-02-18 |
Memory Device Having Separate Programming And Resistance Readout Control
App 20210035639 - Cohen; Guy M. ; et al. | 2021-02-04 |
Architecture for enabling zero value shifting
Grant 10,832,773 - Kim , et al. November 10, 2 | 2020-11-10 |
Integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCM
Grant 10,784,313 - Gong , et al. Sept | 2020-09-22 |
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