Gong; Haiyan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Gong; Haiyan.The latest application filed is for "power savings via selection of sram power source".

Company Profile

1.6.6

Gong; Haiyan - Santa Clara CA
Gong; Haiyan - San Jose CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Write assist negative bit line voltage generator for SRAM array Grant 10,672,461 - Gong , et al.	2020-06-02
Mitigating external influences on long signal lines Grant 9,842,631 - Yang , et al. December 12, 2	2017-12-12
SRAM core cell design with write assist Grant 9,542,992 - Lin , et al. January 10, 2	2017-01-10
Power Savings Via Selection Of Sram Power Source App 20160336054 - FELIX; Stephen ; et al.	2016-11-17
Power savings via selection of SRAM power source Grant 9,484,115 - Felix , et al. November 1, 2	2016-11-01
Hybrid approach to write assist for memory array Grant 9,355,710 - Gong , et al. May 31, 2	2016-05-31
Hybrid Approach To Write Assist For Memory Array App 20150206577 - Gong; Haiyan ; et al.	2015-07-23
Negative Bit Line Write Assist For Memory Array App 20150206576 - Gong; Haiyan ; et al.	2015-07-23
Low power, single-rail level shifters employing power down signal from output power domain and a method of converting a data signal between power domains Grant 9,071,240 - Lin , et al. June 30, 2	2015-06-30
Sram Core Cell Design With Write Assist App 20140313817 - LIN; Hwong-Kwo ; et al.	2014-10-23
Mitigating External Influences On Long Signal Lines App 20140169108 - Yang; Ge ; et al.	2014-06-19
Low Power, Single-rail Level Shifters Employing Power Down Signal From Output Power Domain And A Method Of Converting A Data Signal Between Power Domains App 20140084984 - Lin; Hank ; et al.	2014-03-27

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