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Patent applications and USPTO patent grants for Goldman; Jon C..The latest application filed is for "process and apparatus for low pressure chemical vapor deposition of refractory metal".
Patent | Date |
---|---|
Process and apparatus for low pressure chemical vapor deposition of refractory metal Grant 4,817,557 - Diem , et al. April 4, 1 | 1989-04-04 |
Process for low pressure chemical vapor deposition of refractory metal Grant 4,726,961 - Diem , et al. February 23, 1 | 1988-02-23 |
Gas control system for chemical vapor deposition system Grant 4,369,031 - Goldman , et al. January 18, 1 | 1983-01-18 |
Deposition of silicon nitride Grant 4,279,947 - Goldman , et al. July 21, 1 | 1981-07-21 |
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