Goetz; Werner K.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Goetz; Werner K..The latest application filed is for "p-type layer for a iii-nitride light emitting device".

Company Profile

0.16.18

Goetz; Werner K. - Palo Alto CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
III-nitride light emitting devices grown on templates to reduce strain Grant 7,951,693 - Grillot , et al. May 31, 2	2011-05-31
P-type Layer For A Iii-nitride Light Emitting Device App 20110121358 - KOBAYASHI; JUNKO ; et al.	2011-05-26
P-type layer for a III-nitride light emitting device Grant 7,906,357 - Kobayashi , et al. March 15, 2	2011-03-15
III-nitride light emitting device with double heterostructure light emitting region Grant 7,880,186 - Gardner , et al. February 1, 2	2011-02-01
III-nitride light emitting devices grown on templates to reduce strain Grant 7,547,908 - Grillot , et al. June 16, 2	2009-06-16
III-nitride light emitting devices grown on templates to reduce strain Grant 7,534,638 - Grillot , et al. May 19, 2	2009-05-19
III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain App 20080149961 - Grillot; Patrick N. ; et al.	2008-06-26
III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain App 20080153191 - Grillot; Patrick N. ; et al.	2008-06-26
III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain App 20080153192 - Grillot; Patrick N. ; et al.	2008-06-26
Formation of Ohmic contacts in III-nitride light emitting devices Grant 7,345,323 - Goetz , et al. March 18, 2	2008-03-18
Light emitting diodes with graded composition active regions Grant 7,345,324 - Bour , et al. March 18, 2	2008-03-18
P-Type Layer For A III-Nitride Light Emitting Device App 20070262342 - Kobayashi; Junko ; et al.	2007-11-15
III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region App 20070145384 - Gardner; Nathan F. ; et al.	2007-06-28
Strain-controlled III-nitride light emitting device Grant 6,989,555 - Goetz , et al. January 24, 2	2006-01-24
Strain-controlled III-nitride light emitting device App 20060011937 - Goetz; Werner K. ; et al.	2006-01-19
Light emitting diodes with graded composition active regions App 20050263780 - Bour, David P. ; et al.	2005-12-01
Strain-controlled Iii-nitride Light Emitting Device App 20050236641 - Goetz, Werner K. ; et al.	2005-10-27
Light emitting diodes with graded composition active regions Grant 6,955,933 - Bour , et al. October 18, 2	2005-10-18
Formation of Ohmic contacts in III-nitride light emitting devices App 20050167693 - Goetz, Werner K. ; et al.	2005-08-04
Formation of Ohmic contacts in III-nitride light emitting devices Grant 6,914,272 - Goetz , et al. July 5, 2	2005-07-05
Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers Grant 6,900,067 - Kobayashi , et al. May 31, 2	2005-05-31
Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers App 20040115853 - Kobayashi, Junko ; et al.	2004-06-17
Formation of Ohmic contacts in III-nitride light emitting devices App 20040075097 - Goetz, Werner K. ; et al.	2004-04-22
Formation of ohmic contacts in III-nitride light emitting devices Grant 6,657,300 - Goetz , et al. December 2, 2	2003-12-02
Increasing the brightness of III-Nitride light emitting devices App 20030205717 - Khare, Reena ; et al.	2003-11-06
Indium gallium nitride smoothing structures for III-nitride devices Grant 6,635,904 - Goetz , et al. October 21, 2	2003-10-21
Increasing the brightness of III-nitride light emitting devices Grant 6,576,932 - Khare , et al. June 10, 2	2003-06-10
Light emitting diodes with graded composition active regions App 20030020085 - Bour, David P. ; et al.	2003-01-30
Indium gallium nitride smoothing structures for III-nitride devices Grant 6,489,636 - Goetz , et al. December 3, 2	2002-12-03
Indium gallium nitride smoothing structures for III-nitride devices App 20020171092 - Goetz, Werner K. ; et al.	2002-11-21
Indium Gallium Nitride Smoothing Structures For Iii-nitride Devices App 20020171091 - Goetz, Werner K. ; et al.	2002-11-21
Increasing the brightness of III-nitride light emitting devices App 20020121646 - Khare, Reena ; et al.	2002-09-05
Formation of ohmic contacts in III-nitride light emitting devices App 20020008243 - Goetz, Werner K. ; et al.	2002-01-24
Semiconductor devices constructed from crystallites Grant 5,977,612 - Bour , et al. November 2, 1	1999-11-02

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